Amelioration of the interfacial properties in Au/GaAs schottky contact using sulfidation and hydrogenation

Min Gu Kang, Ji Wan Kim, Hyung Ho Park

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

We report on a novel passivation method of GaAs with sulfidation and hydrogenation, fabricating Au/GaAs interface free of defective interfacial bonds and ultimately improving the electrical property of its Schottky contact. In this study, the realistic bonding features of GaAs surface/interface were directly monitored using high resolution X-ray photoelectron spectroscopy and the electrical properties were evaluated with current-voltage (I-V) method. Sulfur-passivation with (NH4)2S solution, as surface treatment of GaAs, was effective to make Au/GaAs interface completely free of GaAs oxides, while the presence of interfacial excess As originated from Au metallization was unavoidable. To control this defective As compound, we introduced hydrogen-plasma treatment after deposition Au film to S-passivated Schottky diode. The S-passivated and successive hydrogenated Au/GaAs interface showed only non-defective interfacial compound of Ga sulfide, free of any defective bonding state, since interfacial excess As seemed to effectively sublimate by forming volatile As hydride. With complete absence of interfacial excess As, the reverse leakage current of its Schottky diode was dramatically reduced about ten times, compared with only S-passivated sample. From capacitance-voltage (C-V) dopant profile, this two-step method was found to have no damage into GaAs substrate due to the barrier effect of pre-coated Au layer on GaAs surface.

Original languageEnglish
Pages (from-to)7003-7006
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number12 B
Publication statusPublished - 2000 Dec 1

Fingerprint

sulfidation
Passivation
Hydrogenation
hydrogenation
Diodes
Electric properties
Electric potential
Metallizing
Schottky diodes
Hydrides
Leakage currents
passivity
Surface treatment
Capacitance
Sulfur
X ray photoelectron spectroscopy
electrical properties
Doping (additives)
Plasmas
Hydrogen

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "We report on a novel passivation method of GaAs with sulfidation and hydrogenation, fabricating Au/GaAs interface free of defective interfacial bonds and ultimately improving the electrical property of its Schottky contact. In this study, the realistic bonding features of GaAs surface/interface were directly monitored using high resolution X-ray photoelectron spectroscopy and the electrical properties were evaluated with current-voltage (I-V) method. Sulfur-passivation with (NH4)2S solution, as surface treatment of GaAs, was effective to make Au/GaAs interface completely free of GaAs oxides, while the presence of interfacial excess As originated from Au metallization was unavoidable. To control this defective As compound, we introduced hydrogen-plasma treatment after deposition Au film to S-passivated Schottky diode. The S-passivated and successive hydrogenated Au/GaAs interface showed only non-defective interfacial compound of Ga sulfide, free of any defective bonding state, since interfacial excess As seemed to effectively sublimate by forming volatile As hydride. With complete absence of interfacial excess As, the reverse leakage current of its Schottky diode was dramatically reduced about ten times, compared with only S-passivated sample. From capacitance-voltage (C-V) dopant profile, this two-step method was found to have no damage into GaAs substrate due to the barrier effect of pre-coated Au layer on GaAs surface.",
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AB - We report on a novel passivation method of GaAs with sulfidation and hydrogenation, fabricating Au/GaAs interface free of defective interfacial bonds and ultimately improving the electrical property of its Schottky contact. In this study, the realistic bonding features of GaAs surface/interface were directly monitored using high resolution X-ray photoelectron spectroscopy and the electrical properties were evaluated with current-voltage (I-V) method. Sulfur-passivation with (NH4)2S solution, as surface treatment of GaAs, was effective to make Au/GaAs interface completely free of GaAs oxides, while the presence of interfacial excess As originated from Au metallization was unavoidable. To control this defective As compound, we introduced hydrogen-plasma treatment after deposition Au film to S-passivated Schottky diode. The S-passivated and successive hydrogenated Au/GaAs interface showed only non-defective interfacial compound of Ga sulfide, free of any defective bonding state, since interfacial excess As seemed to effectively sublimate by forming volatile As hydride. With complete absence of interfacial excess As, the reverse leakage current of its Schottky diode was dramatically reduced about ten times, compared with only S-passivated sample. From capacitance-voltage (C-V) dopant profile, this two-step method was found to have no damage into GaAs substrate due to the barrier effect of pre-coated Au layer on GaAs surface.

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