Abstract
Transparent thin-film transistors (TTFTs) with amorphous InGaZnO (a-IGZO) channels have been prepared by using a combinatorial thin-film synthesis approach. The In composition ratio, In(%) [= In×100/In+Zn+Ga(%)]' of the channel of the TTFTs varied with position from 50 % to 85 %. This allowed us to study TTFTs characteristics as a function of channel composition. The mobility, the on-off ratio and the threshold voltage of the TTFTs varied from 0.2 cm/V-s to 13 cm/V-s, 3 × 100 to 8 × 107 and -24 to 20 V, respectively. The TTFT with In(%) = 60 % showed a mobility as high as 13 cm/V-s with an on-off ratio of 5.8 × 107 and a threshold voltage of 14 V.
| Original language | English |
|---|---|
| Pages (from-to) | 2029-2032 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 53 |
| Issue number | 4 |
| Publication status | Published - 2008 Oct 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
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Amorphous In-Ga-Zn-O transparent thin-film transistors prepared by using a combinatorial approach. / Moon, Joonchul; Shin, Yongsu; Lee, Giyong; Leem, Youngchul; Ju, Honglyoul; Kim, Sanghui; Park, Changwoo.
In: Journal of the Korean Physical Society, Vol. 53, No. 4, 01.10.2008, p. 2029-2032.Research output: Contribution to journal › Article
TY - JOUR
T1 - Amorphous In-Ga-Zn-O transparent thin-film transistors prepared by using a combinatorial approach
AU - Moon, Joonchul
AU - Shin, Yongsu
AU - Lee, Giyong
AU - Leem, Youngchul
AU - Ju, Honglyoul
AU - Kim, Sanghui
AU - Park, Changwoo
PY - 2008/10/1
Y1 - 2008/10/1
N2 - Transparent thin-film transistors (TTFTs) with amorphous InGaZnO (a-IGZO) channels have been prepared by using a combinatorial thin-film synthesis approach. The In composition ratio, In(%) [= In×100/In+Zn+Ga(%)]' of the channel of the TTFTs varied with position from 50 % to 85 %. This allowed us to study TTFTs characteristics as a function of channel composition. The mobility, the on-off ratio and the threshold voltage of the TTFTs varied from 0.2 cm/V-s to 13 cm/V-s, 3 × 100 to 8 × 107 and -24 to 20 V, respectively. The TTFT with In(%) = 60 % showed a mobility as high as 13 cm/V-s with an on-off ratio of 5.8 × 107 and a threshold voltage of 14 V.
AB - Transparent thin-film transistors (TTFTs) with amorphous InGaZnO (a-IGZO) channels have been prepared by using a combinatorial thin-film synthesis approach. The In composition ratio, In(%) [= In×100/In+Zn+Ga(%)]' of the channel of the TTFTs varied with position from 50 % to 85 %. This allowed us to study TTFTs characteristics as a function of channel composition. The mobility, the on-off ratio and the threshold voltage of the TTFTs varied from 0.2 cm/V-s to 13 cm/V-s, 3 × 100 to 8 × 107 and -24 to 20 V, respectively. The TTFT with In(%) = 60 % showed a mobility as high as 13 cm/V-s with an on-off ratio of 5.8 × 107 and a threshold voltage of 14 V.
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M3 - Article
VL - 53
SP - 2029
EP - 2032
JO - Journal of the Korean Physical Society
JF - Journal of the Korean Physical Society
SN - 0374-4884
IS - 4
ER -