Transparent thin-film transistors (TTFTs) with amorphous InGaZnO (a-IGZO) channels have been prepared by using a combinatorial thin-film synthesis approach. The In composition ratio, In(%) [= In×100/In+Zn+Ga(%)]' of the channel of the TTFTs varied with position from 50 % to 85 %. This allowed us to study TTFTs characteristics as a function of channel composition. The mobility, the on-off ratio and the threshold voltage of the TTFTs varied from 0.2 cm/V-s to 13 cm/V-s, 3 × 100 to 8 × 107 and -24 to 20 V, respectively. The TTFT with In(%) = 60 % showed a mobility as high as 13 cm/V-s with an on-off ratio of 5.8 × 107 and a threshold voltage of 14 V.
|Number of pages||4|
|Journal||Journal of the Korean Physical Society|
|Publication status||Published - 2008 Oct 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)