Abstract
Transparent thin-film transistors (TTFTs) with amorphous InGaZnO (a-IGZO) channels have been prepared by using a combinatorial thin-film synthesis approach. The In composition ratio, In(%) [= In×100/In+Zn+Ga(%)]' of the channel of the TTFTs varied with position from 50 % to 85 %. This allowed us to study TTFTs characteristics as a function of channel composition. The mobility, the on-off ratio and the threshold voltage of the TTFTs varied from 0.2 cm/V-s to 13 cm/V-s, 3 × 100 to 8 × 107 and -24 to 20 V, respectively. The TTFT with In(%) = 60 % showed a mobility as high as 13 cm/V-s with an on-off ratio of 5.8 × 107 and a threshold voltage of 14 V.
| Original language | English |
|---|---|
| Pages (from-to) | 2029-2032 |
| Number of pages | 4 |
| Journal | Journal of the Korean Physical Society |
| Volume | 53 |
| Issue number | 4 |
| Publication status | Published - 2008 Oct 1 |
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All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)
Cite this
Moon, J., Shin, Y., Lee, G., Leem, Y., Ju, H., Kim, S., & Park, C. (2008). Amorphous In-Ga-Zn-O transparent thin-film transistors prepared by using a combinatorial approach. Journal of the Korean Physical Society, 53(4), 2029-2032.