Amorphous In-Ga-Zn-O transparent thin-film transistors prepared by using a combinatorial approach

Joonchul Moon, Yongsu Shin, Giyong Lee, Youngchul Leem, Honglyoul Ju, Sanghui Kim, Changwoo Park

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Transparent thin-film transistors (TTFTs) with amorphous InGaZnO (a-IGZO) channels have been prepared by using a combinatorial thin-film synthesis approach. The In composition ratio, In(%) [= In×100/In+Zn+Ga(%)]' of the channel of the TTFTs varied with position from 50 % to 85 %. This allowed us to study TTFTs characteristics as a function of channel composition. The mobility, the on-off ratio and the threshold voltage of the TTFTs varied from 0.2 cm/V-s to 13 cm/V-s, 3 × 100 to 8 × 107 and -24 to 20 V, respectively. The TTFT with In(%) = 60 % showed a mobility as high as 13 cm/V-s with an on-off ratio of 5.8 × 107 and a threshold voltage of 14 V.

Original languageEnglish
Pages (from-to)2029-2032
Number of pages4
JournalJournal of the Korean Physical Society
Issue number4
Publication statusPublished - 2008 Oct 1


All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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