Amorphous In-Ga-Zn-O transparent thin-film transistors prepared by using a combinatorial approach

Joonchul Moon; Yongsu Shin; Giyong Lee; Youngchul Leem; Honglyoul Ju; Sanghui Kim; Changwoo Park

doi:10.3938/jkps.53.2029

Amorphous In-Ga-Zn-O transparent thin-film transistors prepared by using a combinatorial approach

Joonchul Moon, Yongsu Shin, Giyong Lee, Youngchul Leem, Honglyoul Ju, Sanghui Kim, Changwoo Park

Department of Physics

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Transparent thin-film transistors (TTFTs) with amorphous InGaZnO (a-IGZO) channels have been prepared by using a combinatorial thin-film synthesis approach. The In composition ratio, In(%) [= In×100/In+Zn+Ga(%)]' of the channel of the TTFTs varied with position from 50 % to 85 %. This allowed us to study TTFTs characteristics as a function of channel composition. The mobility, the on-off ratio and the threshold voltage of the TTFTs varied from 0.2 cm/V-s to 13 cm/V-s, 3 × 10⁰ to 8 × 10⁷ and -24 to 20 V, respectively. The TTFT with In(%) = 60 % showed a mobility as high as 13 cm/V-s with an on-off ratio of 5.8 × 10⁷ and a threshold voltage of 14 V.

Original language	English
Pages (from-to)	2029-2032
Number of pages	4
Journal	Journal of the Korean Physical Society
Volume	53
Issue number	4
DOIs	https://doi.org/10.3938/jkps.53.2029
Publication status	Published - 2008 Oct

All Science Journal Classification (ASJC) codes

Physics and Astronomy(all)

Access to Document

10.3938/jkps.53.2029

Fingerprint Dive into the research topics of 'Amorphous In-Ga-Zn-O transparent thin-film transistors prepared by using a combinatorial approach'. Together they form a unique fingerprint.

Cite this

@article{e177fd71e2ad46ac9adb5e62a0d0aa68,

title = "Amorphous In-Ga-Zn-O transparent thin-film transistors prepared by using a combinatorial approach",

abstract = "Transparent thin-film transistors (TTFTs) with amorphous InGaZnO (a-IGZO) channels have been prepared by using a combinatorial thin-film synthesis approach. The In composition ratio, In(%) [= In×100/In+Zn+Ga(%)]' of the channel of the TTFTs varied with position from 50 % to 85 %. This allowed us to study TTFTs characteristics as a function of channel composition. The mobility, the on-off ratio and the threshold voltage of the TTFTs varied from 0.2 cm/V-s to 13 cm/V-s, 3 × 100 to 8 × 107 and -24 to 20 V, respectively. The TTFT with In(%) = 60 % showed a mobility as high as 13 cm/V-s with an on-off ratio of 5.8 × 107 and a threshold voltage of 14 V.",

author = "Joonchul Moon and Yongsu Shin and Giyong Lee and Youngchul Leem and Honglyoul Ju and Sanghui Kim and Changwoo Park",

year = "2008",

month = oct,

doi = "10.3938/jkps.53.2029",

language = "English",

volume = "53",

pages = "2029--2032",

journal = "Journal of the Korean Physical Society",

issn = "0374-4884",

publisher = "Korean Physical Society",

number = "4",

}

TY - JOUR

T1 - Amorphous In-Ga-Zn-O transparent thin-film transistors prepared by using a combinatorial approach

AU - Moon, Joonchul

AU - Shin, Yongsu

AU - Lee, Giyong

AU - Leem, Youngchul

AU - Ju, Honglyoul

AU - Kim, Sanghui

AU - Park, Changwoo

PY - 2008/10

Y1 - 2008/10

N2 - Transparent thin-film transistors (TTFTs) with amorphous InGaZnO (a-IGZO) channels have been prepared by using a combinatorial thin-film synthesis approach. The In composition ratio, In(%) [= In×100/In+Zn+Ga(%)]' of the channel of the TTFTs varied with position from 50 % to 85 %. This allowed us to study TTFTs characteristics as a function of channel composition. The mobility, the on-off ratio and the threshold voltage of the TTFTs varied from 0.2 cm/V-s to 13 cm/V-s, 3 × 100 to 8 × 107 and -24 to 20 V, respectively. The TTFT with In(%) = 60 % showed a mobility as high as 13 cm/V-s with an on-off ratio of 5.8 × 107 and a threshold voltage of 14 V.

AB - Transparent thin-film transistors (TTFTs) with amorphous InGaZnO (a-IGZO) channels have been prepared by using a combinatorial thin-film synthesis approach. The In composition ratio, In(%) [= In×100/In+Zn+Ga(%)]' of the channel of the TTFTs varied with position from 50 % to 85 %. This allowed us to study TTFTs characteristics as a function of channel composition. The mobility, the on-off ratio and the threshold voltage of the TTFTs varied from 0.2 cm/V-s to 13 cm/V-s, 3 × 100 to 8 × 107 and -24 to 20 V, respectively. The TTFT with In(%) = 60 % showed a mobility as high as 13 cm/V-s with an on-off ratio of 5.8 × 107 and a threshold voltage of 14 V.

UR - http://www.scopus.com/inward/record.url?scp=55949107330&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=55949107330&partnerID=8YFLogxK

U2 - 10.3938/jkps.53.2029

DO - 10.3938/jkps.53.2029

M3 - Article

AN - SCOPUS:55949107330

VL - 53

SP - 2029

EP - 2032

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 4

ER -