Amorphous In-Ga-Zn-O transparent thin-film transistors prepared by using a combinatorial approach

Joonchul Moon, Yongsu Shin, Giyong Lee, Youngchul Leem, Honglyoul Ju, Sanghui Kim, Changwoo Park

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

Transparent thin-film transistors (TTFTs) with amorphous InGaZnO (a-IGZO) channels have been prepared by using a combinatorial thin-film synthesis approach. The In composition ratio, In(%) [= In×100/In+Zn+Ga(%)]' of the channel of the TTFTs varied with position from 50 % to 85 %. This allowed us to study TTFTs characteristics as a function of channel composition. The mobility, the on-off ratio and the threshold voltage of the TTFTs varied from 0.2 cm/V-s to 13 cm/V-s, 3 × 100 to 8 × 107 and -24 to 20 V, respectively. The TTFT with In(%) = 60 % showed a mobility as high as 13 cm/V-s with an on-off ratio of 5.8 × 107 and a threshold voltage of 14 V.

Original languageEnglish
Pages (from-to)2029-2032
Number of pages4
JournalJournal of the Korean Physical Society
Volume53
Issue number4
Publication statusPublished - 2008 Oct 1

Fingerprint

transistors
thin films
threshold voltage
synthesis

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

Cite this

Moon, Joonchul ; Shin, Yongsu ; Lee, Giyong ; Leem, Youngchul ; Ju, Honglyoul ; Kim, Sanghui ; Park, Changwoo. / Amorphous In-Ga-Zn-O transparent thin-film transistors prepared by using a combinatorial approach. In: Journal of the Korean Physical Society. 2008 ; Vol. 53, No. 4. pp. 2029-2032.
@article{e177fd71e2ad46ac9adb5e62a0d0aa68,
title = "Amorphous In-Ga-Zn-O transparent thin-film transistors prepared by using a combinatorial approach",
abstract = "Transparent thin-film transistors (TTFTs) with amorphous InGaZnO (a-IGZO) channels have been prepared by using a combinatorial thin-film synthesis approach. The In composition ratio, In({\%}) [= In×100/In+Zn+Ga({\%})]' of the channel of the TTFTs varied with position from 50 {\%} to 85 {\%}. This allowed us to study TTFTs characteristics as a function of channel composition. The mobility, the on-off ratio and the threshold voltage of the TTFTs varied from 0.2 cm/V-s to 13 cm/V-s, 3 × 100 to 8 × 107 and -24 to 20 V, respectively. The TTFT with In({\%}) = 60 {\%} showed a mobility as high as 13 cm/V-s with an on-off ratio of 5.8 × 107 and a threshold voltage of 14 V.",
author = "Joonchul Moon and Yongsu Shin and Giyong Lee and Youngchul Leem and Honglyoul Ju and Sanghui Kim and Changwoo Park",
year = "2008",
month = "10",
day = "1",
language = "English",
volume = "53",
pages = "2029--2032",
journal = "Journal of the Korean Physical Society",
issn = "0374-4884",
publisher = "Korean Physical Society",
number = "4",

}

Amorphous In-Ga-Zn-O transparent thin-film transistors prepared by using a combinatorial approach. / Moon, Joonchul; Shin, Yongsu; Lee, Giyong; Leem, Youngchul; Ju, Honglyoul; Kim, Sanghui; Park, Changwoo.

In: Journal of the Korean Physical Society, Vol. 53, No. 4, 01.10.2008, p. 2029-2032.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Amorphous In-Ga-Zn-O transparent thin-film transistors prepared by using a combinatorial approach

AU - Moon, Joonchul

AU - Shin, Yongsu

AU - Lee, Giyong

AU - Leem, Youngchul

AU - Ju, Honglyoul

AU - Kim, Sanghui

AU - Park, Changwoo

PY - 2008/10/1

Y1 - 2008/10/1

N2 - Transparent thin-film transistors (TTFTs) with amorphous InGaZnO (a-IGZO) channels have been prepared by using a combinatorial thin-film synthesis approach. The In composition ratio, In(%) [= In×100/In+Zn+Ga(%)]' of the channel of the TTFTs varied with position from 50 % to 85 %. This allowed us to study TTFTs characteristics as a function of channel composition. The mobility, the on-off ratio and the threshold voltage of the TTFTs varied from 0.2 cm/V-s to 13 cm/V-s, 3 × 100 to 8 × 107 and -24 to 20 V, respectively. The TTFT with In(%) = 60 % showed a mobility as high as 13 cm/V-s with an on-off ratio of 5.8 × 107 and a threshold voltage of 14 V.

AB - Transparent thin-film transistors (TTFTs) with amorphous InGaZnO (a-IGZO) channels have been prepared by using a combinatorial thin-film synthesis approach. The In composition ratio, In(%) [= In×100/In+Zn+Ga(%)]' of the channel of the TTFTs varied with position from 50 % to 85 %. This allowed us to study TTFTs characteristics as a function of channel composition. The mobility, the on-off ratio and the threshold voltage of the TTFTs varied from 0.2 cm/V-s to 13 cm/V-s, 3 × 100 to 8 × 107 and -24 to 20 V, respectively. The TTFT with In(%) = 60 % showed a mobility as high as 13 cm/V-s with an on-off ratio of 5.8 × 107 and a threshold voltage of 14 V.

UR - http://www.scopus.com/inward/record.url?scp=55949107330&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=55949107330&partnerID=8YFLogxK

M3 - Article

VL - 53

SP - 2029

EP - 2032

JO - Journal of the Korean Physical Society

JF - Journal of the Korean Physical Society

SN - 0374-4884

IS - 4

ER -