Amorphous phase formation in an as-deposited platinum-GaAs interface

Dae Hong Ko, Robert Sinclair

Research output: Contribution to journalArticle

16 Citations (Scopus)

Abstract

The presence of a thin amorphous intermixed layer at the platinum-GaAs interface in as-deposited Pt/GaAs and Si/Pt/GaAs samples has been investigated via high-resolution electron microscopy, microdiffraction, and energy dispersive spectroscopy. The intermixed layer forms below the native oxide of the GaAs substrate and consists of three elements, platinum, gallium, and arsenic. We suggest that this layer forms during the deposition process of the platinum.

Original languageEnglish
Pages (from-to)1851-1853
Number of pages3
JournalApplied Physics Letters
Volume58
Issue number17
DOIs
Publication statusPublished - 1991 Dec 1

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platinum
arsenic
gallium
electron microscopy
electron energy
oxides
high resolution
spectroscopy

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Ko, Dae Hong ; Sinclair, Robert. / Amorphous phase formation in an as-deposited platinum-GaAs interface. In: Applied Physics Letters. 1991 ; Vol. 58, No. 17. pp. 1851-1853.
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Amorphous phase formation in an as-deposited platinum-GaAs interface. / Ko, Dae Hong; Sinclair, Robert.

In: Applied Physics Letters, Vol. 58, No. 17, 01.12.1991, p. 1851-1853.

Research output: Contribution to journalArticle

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