We deposited amorphous silicon (a-Si) films below 150°C with a custom-designed catalytic chemical vapor deposition (Cat-CVD) system. The hydrogen content of the films was controlled at less than 1.5 at. %. Excimer laser crystallization was performed without the preliminary dehydrogenation process. Crystallization occurred at a laser energy density above 70 ml/cm 2. Thin-film transistors (TFTs) were fabricated while the entire process temperatures were maintained at below 200°C. We obtained a field-effect mobility of higher than 100 cm2/(V s) and a sub-threshold slope of 116 mV/dec. The a-Si film prepared by a low temperature Cat-CVD is a promising candidate for polycrystalline silicon TFTs of the active matrix display.
|Journal||Japanese Journal of Applied Physics, Part 2: Letters|
|Publication status||Published - 2006 Mar 10|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)
- Physics and Astronomy(all)