Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application

Sung Hyun Lee, Wan Shick Hong, Jong Man Kim, Hyuck Lim, Kuyng Bae Park, Chul Lae Cho, Kyung Eun Lee, Do Young Kim, Ji Sim Jung, Jang Yeon Kwon, Takashi Noguchi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We deposited amorphous silicon (a-Si) films below 150°C with a custom-designed catalytic chemical vapor deposition (Cat-CVD) system. The hydrogen content of the films was controlled at less than 1.5 at. %. Excimer laser crystallization was performed without the preliminary dehydrogenation process. Crystallization occurred at a laser energy density above 70 ml/cm 2. Thin-film transistors (TFTs) were fabricated while the entire process temperatures were maintained at below 200°C. We obtained a field-effect mobility of higher than 100 cm2/(V s) and a sub-threshold slope of 116 mV/dec. The a-Si film prepared by a low temperature Cat-CVD is a promising candidate for polycrystalline silicon TFTs of the active matrix display.

Original languageEnglish
Pages (from-to)L227-L229
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number8-11
DOIs
Publication statusPublished - 2006 Mar 10

Fingerprint

Thin film transistors
silicon films
Amorphous silicon
Polysilicon
amorphous silicon
Chemical vapor deposition
transistors
Crystallization
vapor deposition
crystallization
Lasers
silicon
dehydrogenation
thin films
excimer lasers
lasers
flux density
Excimer lasers
Dehydrogenation
slopes

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

Cite this

Lee, Sung Hyun ; Hong, Wan Shick ; Kim, Jong Man ; Lim, Hyuck ; Park, Kuyng Bae ; Cho, Chul Lae ; Lee, Kyung Eun ; Kim, Do Young ; Jung, Ji Sim ; Kwon, Jang Yeon ; Noguchi, Takashi. / Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application. In: Japanese Journal of Applied Physics, Part 2: Letters. 2006 ; Vol. 45, No. 8-11. pp. L227-L229.
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Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application. / Lee, Sung Hyun; Hong, Wan Shick; Kim, Jong Man; Lim, Hyuck; Park, Kuyng Bae; Cho, Chul Lae; Lee, Kyung Eun; Kim, Do Young; Jung, Ji Sim; Kwon, Jang Yeon; Noguchi, Takashi.

In: Japanese Journal of Applied Physics, Part 2: Letters, Vol. 45, No. 8-11, 10.03.2006, p. L227-L229.

Research output: Contribution to journalArticle

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AU - Lee, Sung Hyun

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AU - Lim, Hyuck

AU - Park, Kuyng Bae

AU - Cho, Chul Lae

AU - Lee, Kyung Eun

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AU - Jung, Ji Sim

AU - Kwon, Jang Yeon

AU - Noguchi, Takashi

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