Amorphous silicon film deposition by low temperature catalytic chemical vapor deposition (<150°C) and laser crystallization for polycrystalline silicon thin-film transistor application

Sung Hyun Lee, Wan Shick Hong, Jong Man Kim, Hyuck Lim, Kuyng Bae Park, Chul Lae Cho, Kyung Eun Lee, Do Young Kim, Ji Sim Jung, Jang Yeon Kwon, Takashi Noguchi

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

We deposited amorphous silicon (a-Si) films below 150°C with a custom-designed catalytic chemical vapor deposition (Cat-CVD) system. The hydrogen content of the films was controlled at less than 1.5 at. %. Excimer laser crystallization was performed without the preliminary dehydrogenation process. Crystallization occurred at a laser energy density above 70 ml/cm 2. Thin-film transistors (TFTs) were fabricated while the entire process temperatures were maintained at below 200°C. We obtained a field-effect mobility of higher than 100 cm2/(V s) and a sub-threshold slope of 116 mV/dec. The a-Si film prepared by a low temperature Cat-CVD is a promising candidate for polycrystalline silicon TFTs of the active matrix display.

Original languageEnglish
Pages (from-to)L227-L229
JournalJapanese Journal of Applied Physics, Part 2: Letters
Volume45
Issue number8-11
DOIs
Publication statusPublished - 2006 Mar 10

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy (miscellaneous)
  • Physics and Astronomy(all)

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