Amorphous Ta-nanocrystalline RuO x diffusion barrier for lower electrode of high density memory devices

Dong Soo Yoon, Hong Koo Baik, Sung Man Lee, Jae Sung Roh

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

The effects of the amount of RuO 2 added in the Ta film on the electrical properties of a Ta-RuO 2 diffusion barrier were investigated using n ++ -poly-Si substrate at a temperature range of 650-800°C. For the Ta layer prepared without RuO 2 addition, Ta 2 O 5 phase formed after annealing at 650°C by reaction between Ta and external oxygen, leading to a higher total resistance and a non-linear I-V curve. Meanwhile, in the case of the Ta film being deposited with RuO 2 incorporation, not only a lower total resistance and ohmic characteristics exhibited, but also the bottom electrode structure was retained up to 800°C, attributing to the formation of a conductive RuO 2 crystalline phase in the barrier film by reaction with the indiffused oxygen because of a Ta amorphous structure formed by chemically strong Ta-O or Ta-Ru-O bonds and a large amount of conductive RuO 2 added. Since a kinetic barrier for nucleation in formation of the crystalline Ta 2 O 5 phase from an amorphous Ta(O) phase is much higher than that of crystalline RuO 2 phase from nanocrystalline RuO x phase, the formation of the RuO 2 phase by reaction between the indiffused oxygen and the RuO x nanocrystallites is kinetically more favorable than that of Ta 2 O 5 phase.

Original languageEnglish
Article number89
Pages (from-to)493-502
Number of pages10
JournalJournal of Electronic Materials
Volume30
Issue number5
DOIs
Publication statusPublished - 2001 Jan 1

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Diffusion barriers
Oxygen
Crystalline materials
Data storage equipment
Electrodes
electrodes
oxygen
Nanocrystallites
Polysilicon
Electric properties
Nucleation
electrical properties
nucleation
Annealing
Kinetics
annealing
kinetics
Substrates
curves
Temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

Cite this

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title = "Amorphous Ta-nanocrystalline RuO x diffusion barrier for lower electrode of high density memory devices",
abstract = "The effects of the amount of RuO 2 added in the Ta film on the electrical properties of a Ta-RuO 2 diffusion barrier were investigated using n ++ -poly-Si substrate at a temperature range of 650-800°C. For the Ta layer prepared without RuO 2 addition, Ta 2 O 5 phase formed after annealing at 650°C by reaction between Ta and external oxygen, leading to a higher total resistance and a non-linear I-V curve. Meanwhile, in the case of the Ta film being deposited with RuO 2 incorporation, not only a lower total resistance and ohmic characteristics exhibited, but also the bottom electrode structure was retained up to 800°C, attributing to the formation of a conductive RuO 2 crystalline phase in the barrier film by reaction with the indiffused oxygen because of a Ta amorphous structure formed by chemically strong Ta-O or Ta-Ru-O bonds and a large amount of conductive RuO 2 added. Since a kinetic barrier for nucleation in formation of the crystalline Ta 2 O 5 phase from an amorphous Ta(O) phase is much higher than that of crystalline RuO 2 phase from nanocrystalline RuO x phase, the formation of the RuO 2 phase by reaction between the indiffused oxygen and the RuO x nanocrystallites is kinetically more favorable than that of Ta 2 O 5 phase.",
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Amorphous Ta-nanocrystalline RuO x diffusion barrier for lower electrode of high density memory devices . / Yoon, Dong Soo; Baik, Hong Koo; Lee, Sung Man; Roh, Jae Sung.

In: Journal of Electronic Materials, Vol. 30, No. 5, 89, 01.01.2001, p. 493-502.

Research output: Contribution to journalArticle

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AU - Baik, Hong Koo

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AB - The effects of the amount of RuO 2 added in the Ta film on the electrical properties of a Ta-RuO 2 diffusion barrier were investigated using n ++ -poly-Si substrate at a temperature range of 650-800°C. For the Ta layer prepared without RuO 2 addition, Ta 2 O 5 phase formed after annealing at 650°C by reaction between Ta and external oxygen, leading to a higher total resistance and a non-linear I-V curve. Meanwhile, in the case of the Ta film being deposited with RuO 2 incorporation, not only a lower total resistance and ohmic characteristics exhibited, but also the bottom electrode structure was retained up to 800°C, attributing to the formation of a conductive RuO 2 crystalline phase in the barrier film by reaction with the indiffused oxygen because of a Ta amorphous structure formed by chemically strong Ta-O or Ta-Ru-O bonds and a large amount of conductive RuO 2 added. Since a kinetic barrier for nucleation in formation of the crystalline Ta 2 O 5 phase from an amorphous Ta(O) phase is much higher than that of crystalline RuO 2 phase from nanocrystalline RuO x phase, the formation of the RuO 2 phase by reaction between the indiffused oxygen and the RuO x nanocrystallites is kinetically more favorable than that of Ta 2 O 5 phase.

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