An analysis of "non-lattice" oxygen concentration effect on electrical endurance characteristic in resistive switching MnOx thin film

Min Kyu Yang; Gun Hwan Kim; Hyunsu Ju; Jeon Kook Lee; Han Cheol Ryu

doi:10.1063/1.4907704

An analysis of "non-lattice" oxygen concentration effect on electrical endurance characteristic in resistive switching MnO_x thin film

Min Kyu Yang, Gun Hwan Kim, Hyunsu Ju, Jeon Kook Lee, Han Cheol Ryu

School of System & Semiconductor Engineering

Research output: Contribution to journal › Article › peer-review

Abstract

Electrical endurance characteristic of resistive switching MnO_x thin film was investigated associated with various oxygen concentrations. From experimental results of various top electrode changing on the examined devices and oxygen concentration during the post-deposition annealing process, it was revealed that electrical endurance characteristic can be significantly improved by possessing high "non-lattice oxygen" concentration in resistive switching thin film and minimizing out-diffusion of oxygen during resistive switching. Finally, a 250 nm-diameter via-hole structure device, composed of TiN/MnO_x/Pt, was fabricated and the promising electrical endurance and retention characteristics and the impressively narrow distribution of resistive switching operation parameters were confirmed in the MnO_x thin film.

Original language	English
Article number	053504
Journal	Applied Physics Letters
Volume	106
Issue number	5
DOIs	https://doi.org/10.1063/1.4907704
Publication status	Published - 2015 Feb 2

Bibliographical note

Publisher Copyright:
© 2015 AIP Publishing LLC.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4907704

Cite this

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title = "An analysis of {"}non-lattice{"} oxygen concentration effect on electrical endurance characteristic in resistive switching MnOx thin film",

abstract = "Electrical endurance characteristic of resistive switching MnOx thin film was investigated associated with various oxygen concentrations. From experimental results of various top electrode changing on the examined devices and oxygen concentration during the post-deposition annealing process, it was revealed that electrical endurance characteristic can be significantly improved by possessing high {"}non-lattice oxygen{"} concentration in resistive switching thin film and minimizing out-diffusion of oxygen during resistive switching. Finally, a 250 nm-diameter via-hole structure device, composed of TiN/MnOx/Pt, was fabricated and the promising electrical endurance and retention characteristics and the impressively narrow distribution of resistive switching operation parameters were confirmed in the MnOx thin film.",

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T1 - An analysis of "non-lattice" oxygen concentration effect on electrical endurance characteristic in resistive switching MnOx thin film

AU - Yang, Min Kyu

AU - Kim, Gun Hwan

AU - Ju, Hyunsu

AU - Lee, Jeon Kook

AU - Ryu, Han Cheol

PY - 2015/2/2

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N2 - Electrical endurance characteristic of resistive switching MnOx thin film was investigated associated with various oxygen concentrations. From experimental results of various top electrode changing on the examined devices and oxygen concentration during the post-deposition annealing process, it was revealed that electrical endurance characteristic can be significantly improved by possessing high "non-lattice oxygen" concentration in resistive switching thin film and minimizing out-diffusion of oxygen during resistive switching. Finally, a 250 nm-diameter via-hole structure device, composed of TiN/MnOx/Pt, was fabricated and the promising electrical endurance and retention characteristics and the impressively narrow distribution of resistive switching operation parameters were confirmed in the MnOx thin film.

AB - Electrical endurance characteristic of resistive switching MnOx thin film was investigated associated with various oxygen concentrations. From experimental results of various top electrode changing on the examined devices and oxygen concentration during the post-deposition annealing process, it was revealed that electrical endurance characteristic can be significantly improved by possessing high "non-lattice oxygen" concentration in resistive switching thin film and minimizing out-diffusion of oxygen during resistive switching. Finally, a 250 nm-diameter via-hole structure device, composed of TiN/MnOx/Pt, was fabricated and the promising electrical endurance and retention characteristics and the impressively narrow distribution of resistive switching operation parameters were confirmed in the MnOx thin film.

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