Electrical endurance characteristic of resistive switching MnOx thin film was investigated associated with various oxygen concentrations. From experimental results of various top electrode changing on the examined devices and oxygen concentration during the post-deposition annealing process, it was revealed that electrical endurance characteristic can be significantly improved by possessing high "non-lattice oxygen" concentration in resistive switching thin film and minimizing out-diffusion of oxygen during resistive switching. Finally, a 250 nm-diameter via-hole structure device, composed of TiN/MnOx/Pt, was fabricated and the promising electrical endurance and retention characteristics and the impressively narrow distribution of resistive switching operation parameters were confirmed in the MnOx thin film.
|Journal||Applied Physics Letters|
|Publication status||Published - 2015 Feb 2|
Bibliographical notePublisher Copyright:
© 2015 AIP Publishing LLC.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)