An analytical avalanche breakdown model for double gate MOSFET

Edward Namkyu Cho, Yong Hyeon Shin, Ilgu Yun

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

An analytical model of avalanche breakdown for double gate (DG) metal-oxide-semiconductor field-effect transistor (MOSFET) is presented. First of all, the effective mobility (μeff) model is defined to replace the constant mobility model. The channel length modulation (CLM) effect is modeled by solving the Poisson's equation. The avalanche multiplication factor (M) is calculated using the length of saturation region (ΔL). It is shown that the avalanche breakdown characteristics calculated from the analytical model agree well with commercially available 2D numerical simulation results. Based on the results, the reliability of the DG MOSFET can be estimated using the proposed analytical model.

Original languageEnglish
Pages (from-to)38-41
Number of pages4
JournalMicroelectronics Reliability
Volume55
Issue number1
DOIs
Publication statusPublished - 2015 Jan 1

Fingerprint

MOSFET devices
metal oxide semiconductors
avalanches
Analytical models
field effect transistors
breakdown
Poisson equation
Modulation
multiplication
Computer simulation
saturation
modulation
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Safety, Risk, Reliability and Quality
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Cho, Edward Namkyu ; Shin, Yong Hyeon ; Yun, Ilgu. / An analytical avalanche breakdown model for double gate MOSFET. In: Microelectronics Reliability. 2015 ; Vol. 55, No. 1. pp. 38-41.
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An analytical avalanche breakdown model for double gate MOSFET. / Cho, Edward Namkyu; Shin, Yong Hyeon; Yun, Ilgu.

In: Microelectronics Reliability, Vol. 55, No. 1, 01.01.2015, p. 38-41.

Research output: Contribution to journalArticle

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