An efficient DRAM converter for non-volatile based main memory

Sung In Jang, Cheong Ghil Kim, Shin-Dug Kim

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

The new memory technologies having the characteristic of non-volatile such as Phase-change RAM (PRAM), Ferroelectric RAM (FRAM), Magnetic RAM (MRAM) and Resistive RAM (RRAM) that can be replaced the DRAM as main memory have been emerged. Among these memories, PRAM is especially the most promising alternative for DRAM as main memory because of its high density and low power consumption. On the other hand, the slower latency by comparison with DRAM and endurance are caused to reduce performance. In order to exploit these degradations of performance, we propose a hybrid memory system consisting of PRAM and DRAM as a converter. The DRAM converter is comprised of an aggressive streaming buffer to assure better use of spatial locality and an adaptive filtering buffer for better use of temporal locality. Our architecture is designed to enhance the long latency as well as low endurance of PRAM. The proposed structure is implemented by a trace-driven simulator and experimented by using SPEC 2006 traces. Our experimental results indicate that it is able to achieve reducing access count by about 65 %, compared with only PRAM-based main memory system. According to this result, our proposed memory architecture can be used to substitute for the current DRAM main memory system.

Original languageEnglish
Title of host publicationIT Convergence and Security 2012
Pages401-407
Number of pages7
DOIs
Publication statusPublished - 2013 Feb 26
EventInternational Conference on IT Convergence and Security, ICITCS 2012 - Pyeong Chang, Korea, Republic of
Duration: 2012 Dec 52012 Dec 7

Publication series

NameLecture Notes in Electrical Engineering
Volume215 LNEE
ISSN (Print)1876-1100
ISSN (Electronic)1876-1119

Other

OtherInternational Conference on IT Convergence and Security, ICITCS 2012
CountryKorea, Republic of
CityPyeong Chang
Period12/12/512/12/7

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All Science Journal Classification (ASJC) codes

  • Industrial and Manufacturing Engineering

Cite this

Jang, S. I., Kim, C. G., & Kim, S-D. (2013). An efficient DRAM converter for non-volatile based main memory. In IT Convergence and Security 2012 (pp. 401-407). (Lecture Notes in Electrical Engineering; Vol. 215 LNEE). https://doi.org/10.1007/978-94-007-5860-5_49