An enhancement of a thermoelectric power factor in a Ga-doped ZnO system: A chemical compression by enlarged Ga solubility

Kwang Hee Jung, Kyu Hyoung Lee, Won Seon Seo, Soon Mok Choi

Research output: Contribution to journalArticle

45 Citations (Scopus)

Abstract

Herein, we report a significant enhancement of the thermoelectric power factor in polycrystalline Ga-doped ZnO. Despite its higher carrier concentration, the Seebeck coefficient of Zn 0.985Ga 0.015O was larger than that of Zn 0.990Ga 0.010O benefiting from an enhancement of the density of states (DOS) effective mass. A gradual increase in the compressive stress with Ga substitution gave rise to a higher DOS at the bottom of the conduction band. An enlarged solution limit of Ga in the ZnO matrix due to a lower firing temperature accelerated the chemical compression. A single phase n-type Zn 0.985Ga 0.015O bulk exhibited a power factor of 12.5 μWcm -1 K -2.

Original languageEnglish
Article number253902
JournalApplied Physics Letters
Volume100
Issue number25
DOIs
Publication statusPublished - 2012 Jun 18

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solubility
augmentation
Seebeck effect
conduction bands
substitutes
matrices
temperature

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

@article{e13b9bc34c14480d915ad22f43ff28ce,
title = "An enhancement of a thermoelectric power factor in a Ga-doped ZnO system: A chemical compression by enlarged Ga solubility",
abstract = "Herein, we report a significant enhancement of the thermoelectric power factor in polycrystalline Ga-doped ZnO. Despite its higher carrier concentration, the Seebeck coefficient of Zn 0.985Ga 0.015O was larger than that of Zn 0.990Ga 0.010O benefiting from an enhancement of the density of states (DOS) effective mass. A gradual increase in the compressive stress with Ga substitution gave rise to a higher DOS at the bottom of the conduction band. An enlarged solution limit of Ga in the ZnO matrix due to a lower firing temperature accelerated the chemical compression. A single phase n-type Zn 0.985Ga 0.015O bulk exhibited a power factor of 12.5 μWcm -1 K -2.",
author = "Jung, {Kwang Hee} and {Hyoung Lee}, Kyu and Seo, {Won Seon} and Choi, {Soon Mok}",
year = "2012",
month = "6",
day = "18",
doi = "10.1063/1.4729560",
language = "English",
volume = "100",
journal = "Applied Physics Letters",
issn = "0003-6951",
publisher = "American Institute of Physics Publising LLC",
number = "25",

}

An enhancement of a thermoelectric power factor in a Ga-doped ZnO system : A chemical compression by enlarged Ga solubility. / Jung, Kwang Hee; Hyoung Lee, Kyu; Seo, Won Seon; Choi, Soon Mok.

In: Applied Physics Letters, Vol. 100, No. 25, 253902, 18.06.2012.

Research output: Contribution to journalArticle

TY - JOUR

T1 - An enhancement of a thermoelectric power factor in a Ga-doped ZnO system

T2 - A chemical compression by enlarged Ga solubility

AU - Jung, Kwang Hee

AU - Hyoung Lee, Kyu

AU - Seo, Won Seon

AU - Choi, Soon Mok

PY - 2012/6/18

Y1 - 2012/6/18

N2 - Herein, we report a significant enhancement of the thermoelectric power factor in polycrystalline Ga-doped ZnO. Despite its higher carrier concentration, the Seebeck coefficient of Zn 0.985Ga 0.015O was larger than that of Zn 0.990Ga 0.010O benefiting from an enhancement of the density of states (DOS) effective mass. A gradual increase in the compressive stress with Ga substitution gave rise to a higher DOS at the bottom of the conduction band. An enlarged solution limit of Ga in the ZnO matrix due to a lower firing temperature accelerated the chemical compression. A single phase n-type Zn 0.985Ga 0.015O bulk exhibited a power factor of 12.5 μWcm -1 K -2.

AB - Herein, we report a significant enhancement of the thermoelectric power factor in polycrystalline Ga-doped ZnO. Despite its higher carrier concentration, the Seebeck coefficient of Zn 0.985Ga 0.015O was larger than that of Zn 0.990Ga 0.010O benefiting from an enhancement of the density of states (DOS) effective mass. A gradual increase in the compressive stress with Ga substitution gave rise to a higher DOS at the bottom of the conduction band. An enlarged solution limit of Ga in the ZnO matrix due to a lower firing temperature accelerated the chemical compression. A single phase n-type Zn 0.985Ga 0.015O bulk exhibited a power factor of 12.5 μWcm -1 K -2.

UR - http://www.scopus.com/inward/record.url?scp=84863335310&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84863335310&partnerID=8YFLogxK

U2 - 10.1063/1.4729560

DO - 10.1063/1.4729560

M3 - Article

AN - SCOPUS:84863335310

VL - 100

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 25

M1 - 253902

ER -