An enhancement of a thermoelectric power factor in a Ga-doped ZnO system: A chemical compression by enlarged Ga solubility

Kwang Hee Jung; Kyu Hyoung Lee; Won Seon Seo; Soon Mok Choi

doi:10.1063/1.4729560

An enhancement of a thermoelectric power factor in a Ga-doped ZnO system: A chemical compression by enlarged Ga solubility

Kwang Hee Jung, Kyu Hyoung Lee, Won Seon Seo, Soon Mok Choi

Department of Materials Science and Engineering

Research output: Contribution to journal › Article › peer-review

61 Citations (Scopus)

Abstract

Herein, we report a significant enhancement of the thermoelectric power factor in polycrystalline Ga-doped ZnO. Despite its higher carrier concentration, the Seebeck coefficient of Zn _0.985Ga _0.015O was larger than that of Zn _0.990Ga _0.010O benefiting from an enhancement of the density of states (DOS) effective mass. A gradual increase in the compressive stress with Ga substitution gave rise to a higher DOS at the bottom of the conduction band. An enlarged solution limit of Ga in the ZnO matrix due to a lower firing temperature accelerated the chemical compression. A single phase n-type Zn _0.985Ga _0.015O bulk exhibited a power factor of 12.5 μWcm ^-1 K ^-2.

Original language	English
Article number	253902
Journal	Applied Physics Letters
Volume	100
Issue number	25
DOIs	https://doi.org/10.1063/1.4729560
Publication status	Published - 2012 Jun 18

Bibliographical note

Funding Information:
This work was supported by the Fundamental R&D Program for Core Technology of Materials (Grant No. K0006007) funded by the Ministry of Knowledge Economy, Korea.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4729560

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abstract = "Herein, we report a significant enhancement of the thermoelectric power factor in polycrystalline Ga-doped ZnO. Despite its higher carrier concentration, the Seebeck coefficient of Zn 0.985Ga 0.015O was larger than that of Zn 0.990Ga 0.010O benefiting from an enhancement of the density of states (DOS) effective mass. A gradual increase in the compressive stress with Ga substitution gave rise to a higher DOS at the bottom of the conduction band. An enlarged solution limit of Ga in the ZnO matrix due to a lower firing temperature accelerated the chemical compression. A single phase n-type Zn 0.985Ga 0.015O bulk exhibited a power factor of 12.5 μWcm -1 K -2.",

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AU - Seo, Won Seon

AU - Choi, Soon Mok

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N2 - Herein, we report a significant enhancement of the thermoelectric power factor in polycrystalline Ga-doped ZnO. Despite its higher carrier concentration, the Seebeck coefficient of Zn 0.985Ga 0.015O was larger than that of Zn 0.990Ga 0.010O benefiting from an enhancement of the density of states (DOS) effective mass. A gradual increase in the compressive stress with Ga substitution gave rise to a higher DOS at the bottom of the conduction band. An enlarged solution limit of Ga in the ZnO matrix due to a lower firing temperature accelerated the chemical compression. A single phase n-type Zn 0.985Ga 0.015O bulk exhibited a power factor of 12.5 μWcm -1 K -2.

AB - Herein, we report a significant enhancement of the thermoelectric power factor in polycrystalline Ga-doped ZnO. Despite its higher carrier concentration, the Seebeck coefficient of Zn 0.985Ga 0.015O was larger than that of Zn 0.990Ga 0.010O benefiting from an enhancement of the density of states (DOS) effective mass. A gradual increase in the compressive stress with Ga substitution gave rise to a higher DOS at the bottom of the conduction band. An enlarged solution limit of Ga in the ZnO matrix due to a lower firing temperature accelerated the chemical compression. A single phase n-type Zn 0.985Ga 0.015O bulk exhibited a power factor of 12.5 μWcm -1 K -2.

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An enhancement of a thermoelectric power factor in a Ga-doped ZnO system: A chemical compression by enlarged Ga solubility

Abstract

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