An enhancement of a thermoelectric power factor in a Ga-doped ZnO system: A chemical compression by enlarged Ga solubility

Kwang Hee Jung, Kyu Hyoung Lee, Won Seon Seo, Soon Mok Choi

Research output: Contribution to journalArticlepeer-review

47 Citations (Scopus)

Abstract

Herein, we report a significant enhancement of the thermoelectric power factor in polycrystalline Ga-doped ZnO. Despite its higher carrier concentration, the Seebeck coefficient of Zn 0.985Ga 0.015O was larger than that of Zn 0.990Ga 0.010O benefiting from an enhancement of the density of states (DOS) effective mass. A gradual increase in the compressive stress with Ga substitution gave rise to a higher DOS at the bottom of the conduction band. An enlarged solution limit of Ga in the ZnO matrix due to a lower firing temperature accelerated the chemical compression. A single phase n-type Zn 0.985Ga 0.015O bulk exhibited a power factor of 12.5 μWcm -1 K -2.

Original languageEnglish
Article number253902
JournalApplied Physics Letters
Volume100
Issue number25
DOIs
Publication statusPublished - 2012 Jun 18

Bibliographical note

Funding Information:
This work was supported by the Fundamental R&D Program for Core Technology of Materials (Grant No. K0006007) funded by the Ministry of Knowledge Economy, Korea.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'An enhancement of a thermoelectric power factor in a Ga-doped ZnO system: A chemical compression by enlarged Ga solubility'. Together they form a unique fingerprint.

Cite this