Abstract
The oxygen vacancy properties of densified titanium oxide (TiO2) nanocrystals (NCs) with different surface ligand states were evaluated. Fluorous ligand modification resulting in the high densification of NCs and the effect of residual ligands on the surface of the NCs using ultraviolet (UV)-exposure treatment were investigated. After synthesizing the TiO2 NCs at 80 °C, their modification proceeded using 2,2,2-trifluoroacetic acid as the fluorous ligand. NC thin films were formed using spin-casting, after which the UV-exposure treatment was performed. According to the analytical results of crystalline size, surface, optical properties, and surface ligand states of the TiO2 NCs, the ligands on the NCs were decomposed by the UV-exposure treatment under various atmospheres and the flatness of the NC thin films was found to be controlled by the fluorous ligand modification. Thus, the recombination effect of the oxygen vacancies could be controlled by the fluorous ligand modification and UV-exposure treatment.
Original language | English |
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Pages (from-to) | 824-830 |
Number of pages | 7 |
Journal | Applied Surface Science |
Volume | 489 |
DOIs | |
Publication status | Published - 2019 Sept 30 |
Bibliographical note
Funding Information:This work was supported via the LG Display under the LGD-Yonsei University Incubation Program. Experiments using the 10A2 beamline at the Pohang Accelerator Laboratory were supported in part by the Ministry of Education, Science and Technology (MEST) and Pohang University of Science and Technology (POSTECH). This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry and Energy (MOTIE) of the Republic of Korea (No. 20163030013980 ). This research was partially supported by the Graduate School of YONSEI University Research Scholarship Grants in 2018. This material is based upon work supported by the Ministry of Trade, Industry and Energy (MOTIE, Korea) under Industrial Strategic Technology Development Program. No. 10068075 , ‘Development of Mott-transition based forming-less non-volatile resistive switching memory & array’.
Funding Information:
This work was supported via the LG Display under the LGD-Yonsei University Incubation Program. Experiments using the 10A2 beamline at the Pohang Accelerator Laboratory were supported in part by the Ministry of Education, Science and Technology (MEST) and Pohang University of Science and Technology (POSTECH). This work was supported by the Korea Institute of Energy Technology Evaluation and Planning (KETEP) and the Ministry of Trade, Industry and Energy (MOTIE) of the Republic of Korea (No. 20163030013980). This research was partially supported by the Graduate School of YONSEI University Research Scholarship Grants in 2018. This material is based upon work supported by the Ministry of Trade, Industry and Energy (MOTIE, Korea) under Industrial Strategic Technology Development Program. No.10068075, ‘Development of Mott-transition based forming-less non-volatile resistive switching memory & array’.
Publisher Copyright:
© 2019 Elsevier B.V.
All Science Journal Classification (ASJC) codes
- Chemistry(all)
- Condensed Matter Physics
- Physics and Astronomy(all)
- Surfaces and Interfaces
- Surfaces, Coatings and Films