An in-plane GaAs single-electron memory cell operating at 77 K

Kyung-hwa Yoo, J. W. Park, Kim Jinhee, K. S. Park, S. C. Oh, J. O. Lee, J. J. Kim, J. B. Choi, J. J. Lee

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Abstract

An in-plane single-electron memory cell operating at 77 K has been fabricated from a Si-doped thin GaAs film. This device utilizes an artificially fabricated floating node as a storage node and detects the charge stored on the floating node using a single-electron electrometer. Charging of the floating node is evidenced by a large peak in source-drain current as a function of control gate voltage, and is further confirmed by a discrete shift in the peak or threshold voltage.

Original languageEnglish
Pages (from-to)2073-2075
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number14
DOIs
Publication statusPublished - 1999 Apr 5

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Yoo, K., Park, J. W., Jinhee, K., Park, K. S., Oh, S. C., Lee, J. O., Kim, J. J., Choi, J. B., & Lee, J. J. (1999). An in-plane GaAs single-electron memory cell operating at 77 K. Applied Physics Letters, 74(14), 2073-2075. https://doi.org/10.1063/1.123761