This brief proposes a multiplexing scheme to realize an I/Q-channel time-interleaved (TI) bandpass sigma-delta modulator that shares operational transconductance amplifiers to minimize power consumption and silicon area for a low-intermediate-frequency (IF) wireless receiver. The test chip was fabricated for a 10.7-MHz IF system with a 0.35-μm CMOS process. The measured peak signal-to-noise distortion ratio for a 200-kHz bandwidth is approximately 73 dB. The power consumption of the fabricated chip is 61 mW with a 3.3-V supply, and the silicon area is 1.78 mm2. The measured channel crosstalk is about —48 dB.
|Number of pages||5|
|Journal||IEEE Transactions on Circuits and Systems II: Express Briefs|
|Publication status||Published - 2007 Mar 7|
Bibliographical noteFunding Information:
Manuscript received June 30, 2006; revised September 16, 2006. This work was supported by the Ministry of Information and Communication (MIC), Korea, under the Information Technology Research Center Support Program supervised by the Institute of Information Technology Advancement. This paper was recommended by Associate Editor M. Delgado-Restituto.
All Science Journal Classification (ASJC) codes
- Electrical and Electronic Engineering