An offset-canceling triple-stage sensing circuit for deep submicrometer STT-RAM

Taehui Na, Jisu Kim, Jung Pill Kim, Seung H. Kang, Seong Ook Jung

Research output: Contribution to journalArticle

23 Citations (Scopus)


Spin-transfer torque random access memory (STT-RAM) is considered to be a leading candidate for next-generation memory. As technology scales, however, the sensing margin of STT-RAM is significantly degraded because of increased process variation. Furthermore, the sensing current should be < 20μ A to protect the read disturbance in the beyond 45-nm technology, leading to a further decrease in the sensing margin. To achieve a target yield of six sigma in the beyond 45-nm technology with a sensing current of < 20 μ A, an offset-canceling triple-stage (OCTS) sensing circuit is proposed in this brief. The OCTS sensing circuit can overcome the sensing margin and read disturbance problems by sacrificing the sensing time. Monte Carlo HSPICE simulation results using a 45-nm technology model show that the OCTS sensing circuit achieves a target yield of six sigma (96.74% for 32 Mb) with a sensing current of 20 μ A and a sensing time of 6.4 ns.

Original languageEnglish
Article number6701219
Pages (from-to)1620-1624
Number of pages5
JournalIEEE Transactions on Very Large Scale Integration (VLSI) Systems
Issue number7
Publication statusPublished - 2014 Jul


All Science Journal Classification (ASJC) codes

  • Software
  • Hardware and Architecture
  • Electrical and Electronic Engineering

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