An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes

Jong Su Kim, Beom Joon Kim, Young Jin Choi, Moo Hyung Lee, Moon Sung Kang, Jeong Ho Cho

Research output: Contribution to journalArticle

44 Citations (Scopus)

Abstract

A study described the development of high-performance vertical field-effect transistors (VFETs) based on graphene electrodes doped using the underside doping method. It described that the underside doping method enabled effective tuning of the graphene work function while maintaining the surface properties of the pristine graphene, which enhanced the crystalline microstructures of the overlying organic semiconductors grown on the graphene surface. Organic semiconductors (p-type pentacene or n-type N , N ''-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8 )) were deposited on the underside-doped graphene source electrode in contact with the SiO2 gate dielectrics. The effects of grapheme doping on the VFETs performance were systematically investigated.

Original languageEnglish
Pages (from-to)4803-4810
Number of pages8
JournalAdvanced Materials
Volume28
Issue number24
DOIs
Publication statusPublished - 2016 Jan 1

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Graphite
Field effect transistors
Graphene
Electrodes
Semiconducting organic compounds
Doping (additives)
Gate dielectrics
Surface properties
Tuning
Crystalline materials
Microstructure

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kim, Jong Su ; Kim, Beom Joon ; Choi, Young Jin ; Lee, Moo Hyung ; Kang, Moon Sung ; Cho, Jeong Ho. / An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes. In: Advanced Materials. 2016 ; Vol. 28, No. 24. pp. 4803-4810.
@article{bebb6f523f6a408a811f67ae839954b0,
title = "An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes",
abstract = "A study described the development of high-performance vertical field-effect transistors (VFETs) based on graphene electrodes doped using the underside doping method. It described that the underside doping method enabled effective tuning of the graphene work function while maintaining the surface properties of the pristine graphene, which enhanced the crystalline microstructures of the overlying organic semiconductors grown on the graphene surface. Organic semiconductors (p-type pentacene or n-type N , N ''-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8 )) were deposited on the underside-doped graphene source electrode in contact with the SiO2 gate dielectrics. The effects of grapheme doping on the VFETs performance were systematically investigated.",
author = "Kim, {Jong Su} and Kim, {Beom Joon} and Choi, {Young Jin} and Lee, {Moo Hyung} and Kang, {Moon Sung} and Cho, {Jeong Ho}",
year = "2016",
month = "1",
day = "1",
doi = "10.1002/adma.201505378",
language = "English",
volume = "28",
pages = "4803--4810",
journal = "Advanced Materials",
issn = "0935-9648",
publisher = "Wiley-VCH Verlag",
number = "24",

}

An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes. / Kim, Jong Su; Kim, Beom Joon; Choi, Young Jin; Lee, Moo Hyung; Kang, Moon Sung; Cho, Jeong Ho.

In: Advanced Materials, Vol. 28, No. 24, 01.01.2016, p. 4803-4810.

Research output: Contribution to journalArticle

TY - JOUR

T1 - An Organic Vertical Field-Effect Transistor with Underside-Doped Graphene Electrodes

AU - Kim, Jong Su

AU - Kim, Beom Joon

AU - Choi, Young Jin

AU - Lee, Moo Hyung

AU - Kang, Moon Sung

AU - Cho, Jeong Ho

PY - 2016/1/1

Y1 - 2016/1/1

N2 - A study described the development of high-performance vertical field-effect transistors (VFETs) based on graphene electrodes doped using the underside doping method. It described that the underside doping method enabled effective tuning of the graphene work function while maintaining the surface properties of the pristine graphene, which enhanced the crystalline microstructures of the overlying organic semiconductors grown on the graphene surface. Organic semiconductors (p-type pentacene or n-type N , N ''-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8 )) were deposited on the underside-doped graphene source electrode in contact with the SiO2 gate dielectrics. The effects of grapheme doping on the VFETs performance were systematically investigated.

AB - A study described the development of high-performance vertical field-effect transistors (VFETs) based on graphene electrodes doped using the underside doping method. It described that the underside doping method enabled effective tuning of the graphene work function while maintaining the surface properties of the pristine graphene, which enhanced the crystalline microstructures of the overlying organic semiconductors grown on the graphene surface. Organic semiconductors (p-type pentacene or n-type N , N ''-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8 )) were deposited on the underside-doped graphene source electrode in contact with the SiO2 gate dielectrics. The effects of grapheme doping on the VFETs performance were systematically investigated.

UR - http://www.scopus.com/inward/record.url?scp=84975047651&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84975047651&partnerID=8YFLogxK

U2 - 10.1002/adma.201505378

DO - 10.1002/adma.201505378

M3 - Article

C2 - 27071794

AN - SCOPUS:84975047651

VL - 28

SP - 4803

EP - 4810

JO - Advanced Materials

JF - Advanced Materials

SN - 0935-9648

IS - 24

ER -