A study described the development of high-performance vertical field-effect transistors (VFETs) based on graphene electrodes doped using the underside doping method. It described that the underside doping method enabled effective tuning of the graphene work function while maintaining the surface properties of the pristine graphene, which enhanced the crystalline microstructures of the overlying organic semiconductors grown on the graphene surface. Organic semiconductors (p-type pentacene or n-type N , N ''-dioctyl-3,4,9,10-perylenedicarboximide (PTCDI-C8 )) were deposited on the underside-doped graphene source electrode in contact with the SiO2 gate dielectrics. The effects of grapheme doping on the VFETs performance were systematically investigated.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Mechanics of Materials
- Mechanical Engineering