An Outstanding and Highly Manufacturable 80nm DRAM Technology

H. S. Kim, D. H. Kim, J. M. Park, Y. S. Hwang, M. Huh, H. K. Hwang, N. J. Kang, B. H. Lee, M. H. Cho, S. E. Kim, J. Y. Kim, B. J. Park, J. W. Lee, D. I. Kim, M. Y. Jeong, H. J. Kim, Y. J. Park, Kinam Kim

Research output: Contribution to journalConference article

9 Citations (Scopus)

Abstract

For the first time, fully working 512Mb DRAMs have been developed successfully using an 80nm DRAM technology, which is the smallest feature size in DRAM technology ever reported. With an ArF lithography, Recess-Channel-Array-Transistor (RCAT), low-temperature MIS capacitor technologies and a newly developed Top Spacer storage node Contact (TSC), we have realized these 512Mb DRAMs. Also, we have reduced process steps including the layer requiring ArF lithography by using TSC process.

Original languageEnglish
Pages (from-to)411-414
Number of pages4
JournalTechnical Digest - International Electron Devices Meeting
Publication statusPublished - 2003
EventIEEE International Electron Devices Meeting - Washington, DC, United States
Duration: 2003 Dec 82003 Dec 10

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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  • Cite this

    Kim, H. S., Kim, D. H., Park, J. M., Hwang, Y. S., Huh, M., Hwang, H. K., Kang, N. J., Lee, B. H., Cho, M. H., Kim, S. E., Kim, J. Y., Park, B. J., Lee, J. W., Kim, D. I., Jeong, M. Y., Kim, H. J., Park, Y. J., & Kim, K. (2003). An Outstanding and Highly Manufacturable 80nm DRAM Technology. Technical Digest - International Electron Devices Meeting, 411-414.