Abstract
This article presents an RLC matched power amplifier using quasi-MMIC technology in the X-band. The power amplifier consists of a GaN HEMT power device and several passive components including inductors, capacitors, resistors, and transmission lines using a silicon integrated passive device (IPD) process. The standard silicon process can drive the solution to cost down compared with conventional microwave monolithic integrated circuit (MMIC) technology. This technology using silicon IPDs provides small size matching networks close to MMIC dimensions. The input matching network using the RLC matched circuit is designed to obtain broadband characteristic and gain flatness. The dimensions of input and output silicon IPD are 1.5 mm × 1.2 mm and 1.9 mm × 2.2 mm, respectively, with a thickness of only 0.15 mm. The measured results show that the quasi-MMIC power amplifier has a P3dB of more than 38.3 dBm with a drain efficiency of more than 51.2% in the frequency range from 8.2 to 10 GHz.
| Original language | English |
|---|---|
| Pages (from-to) | 2803-2807 |
| Number of pages | 5 |
| Journal | Microwave and Optical Technology Letters |
| Volume | 57 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 2015 Dec 1 |
Bibliographical note
Publisher Copyright:© 2015 Wiley Periodicals, Inc.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering