Abstract
Polarization sensitivity of semiconductor optical amplifiers (SOAs) with delta-strained quantum-well (QW) structures is investigated. The valence band structures and TE, TM optical gain spectra are calculated for the various delta-strained QW structures. It is shown that the number and location of the delta layers affect the polarization dependence of the delta-strained quantum well SOA signal gains. The optimal delta-strained QW structure for the SOA application is identified and its theoretical verification is provided.
| Original language | English |
|---|---|
| Pages (from-to) | 574-579 |
| Number of pages | 6 |
| Journal | IEEE Journal of Quantum Electronics |
| Volume | 37 |
| Issue number | 4 |
| DOIs | |
| Publication status | Published - 2001 Apr 1 |
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All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering
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Analysis and optimization of polarization-insensitive semiconductor optical amplifiers with delta-strained quantum wells. / Cho, Yong Sang; Choi, Woo Young.
In: IEEE Journal of Quantum Electronics, Vol. 37, No. 4, 01.04.2001, p. 574-579.Research output: Contribution to journal › Article
TY - JOUR
T1 - Analysis and optimization of polarization-insensitive semiconductor optical amplifiers with delta-strained quantum wells
AU - Cho, Yong Sang
AU - Choi, Woo Young
PY - 2001/4/1
Y1 - 2001/4/1
N2 - Polarization sensitivity of semiconductor optical amplifiers (SOAs) with delta-strained quantum-well (QW) structures is investigated. The valence band structures and TE, TM optical gain spectra are calculated for the various delta-strained QW structures. It is shown that the number and location of the delta layers affect the polarization dependence of the delta-strained quantum well SOA signal gains. The optimal delta-strained QW structure for the SOA application is identified and its theoretical verification is provided.
AB - Polarization sensitivity of semiconductor optical amplifiers (SOAs) with delta-strained quantum-well (QW) structures is investigated. The valence band structures and TE, TM optical gain spectra are calculated for the various delta-strained QW structures. It is shown that the number and location of the delta layers affect the polarization dependence of the delta-strained quantum well SOA signal gains. The optimal delta-strained QW structure for the SOA application is identified and its theoretical verification is provided.
UR - http://www.scopus.com/inward/record.url?scp=0035310580&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0035310580&partnerID=8YFLogxK
U2 - 10.1109/3.914407
DO - 10.1109/3.914407
M3 - Article
AN - SCOPUS:0035310580
VL - 37
SP - 574
EP - 579
JO - IEEE Journal of Quantum Electronics
JF - IEEE Journal of Quantum Electronics
SN - 0018-9197
IS - 4
ER -