Analysis and optimization of polarization-insensitive semiconductor optical amplifiers with delta-strained quantum wells

Yong Sang Cho; Woo Young Choi

doi:10.1109/3.914407

Analysis and optimization of polarization-insensitive semiconductor optical amplifiers with delta-strained quantum wells

Yong Sang Cho, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Polarization sensitivity of semiconductor optical amplifiers (SOAs) with delta-strained quantum-well (QW) structures is investigated. The valence band structures and TE, TM optical gain spectra are calculated for the various delta-strained QW structures. It is shown that the number and location of the delta layers affect the polarization dependence of the delta-strained quantum well SOA signal gains. The optimal delta-strained QW structure for the SOA application is identified and its theoretical verification is provided.

Original language	English
Pages (from-to)	574-579
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	37
Issue number	4
DOIs	https://doi.org/10.1109/3.914407
Publication status	Published - 2001 Apr

Bibliographical note

Funding Information:
Manuscript received August 28, 2000; revised November 27, 2000. This work was supported in part by Advanced Photonics Technology Project in Korea and also by the Brain Korea 21 Project. The authors are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea. Publisher Item Identifier S 0018-9197(01)02327-2.

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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@article{0cfd862e9fc74a43bde560f2aaa0b7f6,

title = "Analysis and optimization of polarization-insensitive semiconductor optical amplifiers with delta-strained quantum wells",

abstract = "Polarization sensitivity of semiconductor optical amplifiers (SOAs) with delta-strained quantum-well (QW) structures is investigated. The valence band structures and TE, TM optical gain spectra are calculated for the various delta-strained QW structures. It is shown that the number and location of the delta layers affect the polarization dependence of the delta-strained quantum well SOA signal gains. The optimal delta-strained QW structure for the SOA application is identified and its theoretical verification is provided.",

author = "Cho, {Yong Sang} and Choi, {Woo Young}",

note = "Funding Information: Manuscript received August 28, 2000; revised November 27, 2000. This work was supported in part by Advanced Photonics Technology Project in Korea and also by the Brain Korea 21 Project. The authors are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea. Publisher Item Identifier S 0018-9197(01)02327-2.",

year = "2001",

month = apr,

doi = "10.1109/3.914407",

language = "English",

volume = "37",

pages = "574--579",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Analysis and optimization of polarization-insensitive semiconductor optical amplifiers with delta-strained quantum wells

AU - Cho, Yong Sang

AU - Choi, Woo Young

N1 - Funding Information: Manuscript received August 28, 2000; revised November 27, 2000. This work was supported in part by Advanced Photonics Technology Project in Korea and also by the Brain Korea 21 Project. The authors are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea. Publisher Item Identifier S 0018-9197(01)02327-2.

PY - 2001/4

Y1 - 2001/4

N2 - Polarization sensitivity of semiconductor optical amplifiers (SOAs) with delta-strained quantum-well (QW) structures is investigated. The valence band structures and TE, TM optical gain spectra are calculated for the various delta-strained QW structures. It is shown that the number and location of the delta layers affect the polarization dependence of the delta-strained quantum well SOA signal gains. The optimal delta-strained QW structure for the SOA application is identified and its theoretical verification is provided.

AB - Polarization sensitivity of semiconductor optical amplifiers (SOAs) with delta-strained quantum-well (QW) structures is investigated. The valence band structures and TE, TM optical gain spectra are calculated for the various delta-strained QW structures. It is shown that the number and location of the delta layers affect the polarization dependence of the delta-strained quantum well SOA signal gains. The optimal delta-strained QW structure for the SOA application is identified and its theoretical verification is provided.

UR - http://www.scopus.com/inward/record.url?scp=0035310580&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035310580&partnerID=8YFLogxK

U2 - 10.1109/3.914407

DO - 10.1109/3.914407

M3 - Article

AN - SCOPUS:0035310580

VL - 37

SP - 574

EP - 579

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 4

ER -

Analysis and optimization of polarization-insensitive semiconductor optical amplifiers with delta-strained quantum wells

Abstract

Bibliographical note

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