Polarization sensitivity of semiconductor optical amplifiers (SOAs) with delta-strained quantum-well (QW) structures is investigated. The valence band structures and TE, TM optical gain spectra are calculated for the various delta-strained QW structures. It is shown that the number and location of the delta layers affect the polarization dependence of the delta-strained quantum well SOA signal gains. The optimal delta-strained QW structure for the SOA application is identified and its theoretical verification is provided.
Bibliographical noteFunding Information:
Manuscript received August 28, 2000; revised November 27, 2000. This work was supported in part by Advanced Photonics Technology Project in Korea and also by the Brain Korea 21 Project. The authors are with the Department of Electrical and Electronic Engineering, Yonsei University, Seoul, Korea. Publisher Item Identifier S 0018-9197(01)02327-2.
All Science Journal Classification (ASJC) codes
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Electrical and Electronic Engineering