Analysis and optimization of polarization-insensitive semiconductor optical amplifiers with delta-strained quantum wells

Yong Sang Cho; Woo Young Choi

doi:10.1109/3.914407

Analysis and optimization of polarization-insensitive semiconductor optical amplifiers with delta-strained quantum wells

Yong Sang Cho, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article

6 Citations (Scopus)

Abstract

Polarization sensitivity of semiconductor optical amplifiers (SOAs) with delta-strained quantum-well (QW) structures is investigated. The valence band structures and TE, TM optical gain spectra are calculated for the various delta-strained QW structures. It is shown that the number and location of the delta layers affect the polarization dependence of the delta-strained quantum well SOA signal gains. The optimal delta-strained QW structure for the SOA application is identified and its theoretical verification is provided.

Original language	English
Pages (from-to)	574-579
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	37
Issue number	4
DOIs	https://doi.org/10.1109/3.914407
Publication status	Published - 2001 Apr 1

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All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

Cite this

Cho, Y. S., & Choi, W. Y. (2001). Analysis and optimization of polarization-insensitive semiconductor optical amplifiers with delta-strained quantum wells. IEEE Journal of Quantum Electronics, 37(4), 574-579. https://doi.org/10.1109/3.914407

@article{0cfd862e9fc74a43bde560f2aaa0b7f6,

title = "Analysis and optimization of polarization-insensitive semiconductor optical amplifiers with delta-strained quantum wells",

abstract = "Polarization sensitivity of semiconductor optical amplifiers (SOAs) with delta-strained quantum-well (QW) structures is investigated. The valence band structures and TE, TM optical gain spectra are calculated for the various delta-strained QW structures. It is shown that the number and location of the delta layers affect the polarization dependence of the delta-strained quantum well SOA signal gains. The optimal delta-strained QW structure for the SOA application is identified and its theoretical verification is provided.",

author = "Cho, {Yong Sang} and Choi, {Woo Young}",

year = "2001",

month = apr

day = "1",

doi = "10.1109/3.914407",

language = "English",

volume = "37",

pages = "574--579",

journal = "IEEE Journal of Quantum Electronics",

issn = "0018-9197",

publisher = "Institute of Electrical and Electronics Engineers Inc.",

number = "4",

}

TY - JOUR

T1 - Analysis and optimization of polarization-insensitive semiconductor optical amplifiers with delta-strained quantum wells

AU - Cho, Yong Sang

AU - Choi, Woo Young

PY - 2001/4/1

Y1 - 2001/4/1

N2 - Polarization sensitivity of semiconductor optical amplifiers (SOAs) with delta-strained quantum-well (QW) structures is investigated. The valence band structures and TE, TM optical gain spectra are calculated for the various delta-strained QW structures. It is shown that the number and location of the delta layers affect the polarization dependence of the delta-strained quantum well SOA signal gains. The optimal delta-strained QW structure for the SOA application is identified and its theoretical verification is provided.

AB - Polarization sensitivity of semiconductor optical amplifiers (SOAs) with delta-strained quantum-well (QW) structures is investigated. The valence band structures and TE, TM optical gain spectra are calculated for the various delta-strained QW structures. It is shown that the number and location of the delta layers affect the polarization dependence of the delta-strained quantum well SOA signal gains. The optimal delta-strained QW structure for the SOA application is identified and its theoretical verification is provided.

UR - http://www.scopus.com/inward/record.url?scp=0035310580&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035310580&partnerID=8YFLogxK

U2 - 10.1109/3.914407

DO - 10.1109/3.914407

M3 - Article

AN - SCOPUS:0035310580

VL - 37

SP - 574

EP - 579

JO - IEEE Journal of Quantum Electronics

JF - IEEE Journal of Quantum Electronics

SN - 0018-9197

IS - 4

ER -

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10.1109/3.914407