Analysis and optimization of polarization-insensitive semiconductor optical amplifiers with delta-strained quantum wells

Yong Sang Cho; Woo Young Choi

doi:10.1109/3.914407

Analysis and optimization of polarization-insensitive semiconductor optical amplifiers with delta-strained quantum wells

Yong Sang Cho, Woo Young Choi

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

6 Citations (Scopus)

Abstract

Polarization sensitivity of semiconductor optical amplifiers (SOAs) with delta-strained quantum-well (QW) structures is investigated. The valence band structures and TE, TM optical gain spectra are calculated for the various delta-strained QW structures. It is shown that the number and location of the delta layers affect the polarization dependence of the delta-strained quantum well SOA signal gains. The optimal delta-strained QW structure for the SOA application is identified and its theoretical verification is provided.

Original language	English
Pages (from-to)	574-579
Number of pages	6
Journal	IEEE Journal of Quantum Electronics
Volume	37
Issue number	4
DOIs	https://doi.org/10.1109/3.914407
Publication status	Published - 2001 Apr

All Science Journal Classification (ASJC) codes

Atomic and Molecular Physics, and Optics
Condensed Matter Physics
Electrical and Electronic Engineering

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abstract = "Polarization sensitivity of semiconductor optical amplifiers (SOAs) with delta-strained quantum-well (QW) structures is investigated. The valence band structures and TE, TM optical gain spectra are calculated for the various delta-strained QW structures. It is shown that the number and location of the delta layers affect the polarization dependence of the delta-strained quantum well SOA signal gains. The optimal delta-strained QW structure for the SOA application is identified and its theoretical verification is provided.",

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AB - Polarization sensitivity of semiconductor optical amplifiers (SOAs) with delta-strained quantum-well (QW) structures is investigated. The valence band structures and TE, TM optical gain spectra are calculated for the various delta-strained QW structures. It is shown that the number and location of the delta layers affect the polarization dependence of the delta-strained quantum well SOA signal gains. The optimal delta-strained QW structure for the SOA application is identified and its theoretical verification is provided.

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Analysis and optimization of polarization-insensitive semiconductor optical amplifiers with delta-strained quantum wells

Abstract

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