A new self-aligned ESD (Elevated Source Drain) MOSFET structure which can effectively reduce the GIDL (Gate-Induced Drain Leakage) current is proposed and analyzed. Proposed ESD structure is characterized by sidewall spacer width (WS) and recessed-channel depth (XR) which are determined by dry-etching process. Elevation of the Source/Drain extension region is realized so that the low-activation effect caused by low-energy ion implantation can be avoided. The GIDL current in the proposed ESD structure is reduced as the region with the peak electric field is shifted toward the drain side.
|Number of pages||4|
|Publication status||Published - 2000 Dec 1|
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