Analysis of a novel self-aligned elevated source drain metal-oxide-semiconductor field-effect transistor with reduced gate-induced drain leakage current and high driving capability

Kyung Whan Kim, Chang Soon Choi, Woo Young Choi

Research output: Contribution to journalArticle

Abstract

A new self-aligned elevated source drain (E-S/D) metal-oxide-semiconductor field-effect transistor (MOSFET) structure which can effectively reduce the gate-induced drain leakage (GIDL) current without sacrificing the driving capability is proposed and analyzed. Proposed E-S/D structure is characterized by sidewall spacer width and recessed-channel depth which are determined by dry etching process. Elevation of the Source/Drain extension region is realized so that the low-activation effect caused by low-energy ion implantation can be avoided. The GIDL current in the proposed E-S/D structure is reduced as the region with the peak electric field is shifted toward the drain side.

Original languageEnglish
Pages (from-to)6208-6211
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number11
DOIs
Publication statusPublished - 2000 Nov

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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