A new self-aligned elevated source drain (E-S/D) metal-oxide-semiconductor field-effect transistor (MOSFET) structure which can effectively reduce the gate-induced drain leakage (GIDL) current without sacrificing the driving capability is proposed and analyzed. Proposed E-S/D structure is characterized by sidewall spacer width and recessed-channel depth which are determined by dry etching process. Elevation of the Source/Drain extension region is realized so that the low-activation effect caused by low-energy ion implantation can be avoided. The GIDL current in the proposed E-S/D structure is reduced as the region with the peak electric field is shifted toward the drain side.
|Number of pages||4|
|Journal||Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers|
|Publication status||Published - 2000 Nov 1|
All Science Journal Classification (ASJC) codes
- Physics and Astronomy(all)