Analysis of a novel self-aligned elevated source drain metal-oxide-semiconductor field-effect transistor with reduced gate-induced drain leakage current and high driving capability

Kyung Whan Kim, Chang Soon Choi, Woo-Young Choi

Research output: Contribution to journalArticle

Abstract

A new self-aligned elevated source drain (E-S/D) metal-oxide-semiconductor field-effect transistor (MOSFET) structure which can effectively reduce the gate-induced drain leakage (GIDL) current without sacrificing the driving capability is proposed and analyzed. Proposed E-S/D structure is characterized by sidewall spacer width and recessed-channel depth which are determined by dry etching process. Elevation of the Source/Drain extension region is realized so that the low-activation effect caused by low-energy ion implantation can be avoided. The GIDL current in the proposed E-S/D structure is reduced as the region with the peak electric field is shifted toward the drain side.

Original languageEnglish
Pages (from-to)6208-6211
Number of pages4
JournalJapanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume39
Issue number11
Publication statusPublished - 2000 Nov 1

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MOSFET devices
metal oxide semiconductors
Leakage currents
leakage
field effect transistors
Dry etching
Ion implantation
Chemical activation
Electric fields
spacers
ion implantation
etching
activation
electric fields
energy

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

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abstract = "A new self-aligned elevated source drain (E-S/D) metal-oxide-semiconductor field-effect transistor (MOSFET) structure which can effectively reduce the gate-induced drain leakage (GIDL) current without sacrificing the driving capability is proposed and analyzed. Proposed E-S/D structure is characterized by sidewall spacer width and recessed-channel depth which are determined by dry etching process. Elevation of the Source/Drain extension region is realized so that the low-activation effect caused by low-energy ion implantation can be avoided. The GIDL current in the proposed E-S/D structure is reduced as the region with the peak electric field is shifted toward the drain side.",
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AU - Choi, Chang Soon

AU - Choi, Woo-Young

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