Analysis of anisotropic in-plane strain behavior in condensed Si1-xGex fin epitaxial layer using X-ray reciprocal space mapping

Hyunchul Jang, Byongju Kim, Sangmo Koo, Yongjoon Choi, Chan Soo Shin, Dae Hong Ko

Research output: Contribution to journalArticle

Abstract

Epitaxial Si1-xGex fin layers with x = 0.50 and 0.63 were selectively grown on trench patterned Si (001) substrates with trench widths of 65 and 90 nm. Using a dry oxidation process for the Si1-xGex fin layers, the Ge was condensed by up to ca. 90% while anisotropic in-plane strain was induced. To analyze the anisotropic in-plane strain behavior, reciprocal space mapping measurements were performed in the directions parallel and perpendicular to the fins. After the condensation, a compressive strain of ca. 1% was induced in the direction parallel to the fin. We discuss the uniaxial stress factor influencing the anisotropic in-plane strain of the condensed Si1-xGex fin layer in the two trench patterns.

Original languageEnglish
Article number036502
JournalJapanese Journal of Applied Physics
Volume58
Issue number3
DOIs
Publication statusPublished - 2019 Mar 1

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plane strain
Epitaxial layers
fins
X rays
x rays
Condensation
Oxidation
condensation
Substrates
oxidation

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

@article{acebe2399e5b41a2acfca7720905d20b,
title = "Analysis of anisotropic in-plane strain behavior in condensed Si1-xGex fin epitaxial layer using X-ray reciprocal space mapping",
abstract = "Epitaxial Si1-xGex fin layers with x = 0.50 and 0.63 were selectively grown on trench patterned Si (001) substrates with trench widths of 65 and 90 nm. Using a dry oxidation process for the Si1-xGex fin layers, the Ge was condensed by up to ca. 90{\%} while anisotropic in-plane strain was induced. To analyze the anisotropic in-plane strain behavior, reciprocal space mapping measurements were performed in the directions parallel and perpendicular to the fins. After the condensation, a compressive strain of ca. 1{\%} was induced in the direction parallel to the fin. We discuss the uniaxial stress factor influencing the anisotropic in-plane strain of the condensed Si1-xGex fin layer in the two trench patterns.",
author = "Hyunchul Jang and Byongju Kim and Sangmo Koo and Yongjoon Choi and Shin, {Chan Soo} and Ko, {Dae Hong}",
year = "2019",
month = "3",
day = "1",
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language = "English",
volume = "58",
journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
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Analysis of anisotropic in-plane strain behavior in condensed Si1-xGex fin epitaxial layer using X-ray reciprocal space mapping. / Jang, Hyunchul; Kim, Byongju; Koo, Sangmo; Choi, Yongjoon; Shin, Chan Soo; Ko, Dae Hong.

In: Japanese Journal of Applied Physics, Vol. 58, No. 3, 036502, 01.03.2019.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Analysis of anisotropic in-plane strain behavior in condensed Si1-xGex fin epitaxial layer using X-ray reciprocal space mapping

AU - Jang, Hyunchul

AU - Kim, Byongju

AU - Koo, Sangmo

AU - Choi, Yongjoon

AU - Shin, Chan Soo

AU - Ko, Dae Hong

PY - 2019/3/1

Y1 - 2019/3/1

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AB - Epitaxial Si1-xGex fin layers with x = 0.50 and 0.63 were selectively grown on trench patterned Si (001) substrates with trench widths of 65 and 90 nm. Using a dry oxidation process for the Si1-xGex fin layers, the Ge was condensed by up to ca. 90% while anisotropic in-plane strain was induced. To analyze the anisotropic in-plane strain behavior, reciprocal space mapping measurements were performed in the directions parallel and perpendicular to the fins. After the condensation, a compressive strain of ca. 1% was induced in the direction parallel to the fin. We discuss the uniaxial stress factor influencing the anisotropic in-plane strain of the condensed Si1-xGex fin layer in the two trench patterns.

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