Analysis of anisotropic in-plane strain behavior in condensed Si1-xGex fin epitaxial layer using X-ray reciprocal space mapping

Hyunchul Jang, Byongju Kim, Sangmo Koo, Yongjoon Choi, Chan Soo Shin, Dae Hong Ko

Research output: Contribution to journalArticle

Abstract

Epitaxial Si1-xGex fin layers with x = 0.50 and 0.63 were selectively grown on trench patterned Si (001) substrates with trench widths of 65 and 90 nm. Using a dry oxidation process for the Si1-xGex fin layers, the Ge was condensed by up to ca. 90% while anisotropic in-plane strain was induced. To analyze the anisotropic in-plane strain behavior, reciprocal space mapping measurements were performed in the directions parallel and perpendicular to the fins. After the condensation, a compressive strain of ca. 1% was induced in the direction parallel to the fin. We discuss the uniaxial stress factor influencing the anisotropic in-plane strain of the condensed Si1-xGex fin layer in the two trench patterns.

Original languageEnglish
Article number036502
JournalJapanese Journal of Applied Physics
Volume58
Issue number3
DOIs
Publication statusPublished - 2019 Mar 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)
  • Physics and Astronomy(all)

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