Analysis of Intrinsic Charge Loss Mechanisms for Nanoscale NAND Flash Memory

Jun Yeong Lim, Pyung Moon, Sang Myung Lee, Keum Whan Noh, Tae Un Youn, Jong Wook Kim, Ilgu Yun

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

In the current memory market, many researchers have analyzed the data retention characteristic and predicted the related leakage mechanism. Most studies have shown that the dominant degradation of retention characteristics of Flash memory occurs in the tunneling oxide after program/erase cycling. However, serious degradation of the retention characteristics is also seen in the intrinsic situation before program/erase cycling of devices through the oxide-nitride-oxide (ONO) interpoly dielectric. In this paper, we analyze that degradation by examining the various charge loss mechanisms of the device before cycling and extract two appropriate charge loss mechanisms by comparing the measured V-th data with the TCAD simulation data, and we verify the mechanisms by extracting the activation energy of each mechanism. We also analyze the effects on those two mechanisms as the ONO thickness and temperature are changed. Based on the results, we establish the intrinsic leakage mechanism through the ONO layers and predict the change in leakage mechanism as the thickness of the ONO layers is decreased.

Original languageEnglish
Article number7112489
Pages (from-to)319-325
Number of pages7
JournalIEEE Transactions on Device and Materials Reliability
Volume15
Issue number3
DOIs
Publication statusPublished - 2015 Sep 1

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Flash memory
Oxides
Nitrides
Degradation
Activation energy
Data storage equipment

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Safety, Risk, Reliability and Quality
  • Electrical and Electronic Engineering

Cite this

Lim, Jun Yeong ; Moon, Pyung ; Lee, Sang Myung ; Noh, Keum Whan ; Youn, Tae Un ; Kim, Jong Wook ; Yun, Ilgu. / Analysis of Intrinsic Charge Loss Mechanisms for Nanoscale NAND Flash Memory. In: IEEE Transactions on Device and Materials Reliability. 2015 ; Vol. 15, No. 3. pp. 319-325.
@article{4941456abfa1460e9cc72183b4c01c8e,
title = "Analysis of Intrinsic Charge Loss Mechanisms for Nanoscale NAND Flash Memory",
abstract = "In the current memory market, many researchers have analyzed the data retention characteristic and predicted the related leakage mechanism. Most studies have shown that the dominant degradation of retention characteristics of Flash memory occurs in the tunneling oxide after program/erase cycling. However, serious degradation of the retention characteristics is also seen in the intrinsic situation before program/erase cycling of devices through the oxide-nitride-oxide (ONO) interpoly dielectric. In this paper, we analyze that degradation by examining the various charge loss mechanisms of the device before cycling and extract two appropriate charge loss mechanisms by comparing the measured V-th data with the TCAD simulation data, and we verify the mechanisms by extracting the activation energy of each mechanism. We also analyze the effects on those two mechanisms as the ONO thickness and temperature are changed. Based on the results, we establish the intrinsic leakage mechanism through the ONO layers and predict the change in leakage mechanism as the thickness of the ONO layers is decreased.",
author = "Lim, {Jun Yeong} and Pyung Moon and Lee, {Sang Myung} and Noh, {Keum Whan} and Youn, {Tae Un} and Kim, {Jong Wook} and Ilgu Yun",
year = "2015",
month = "9",
day = "1",
doi = "10.1109/TDMR.2015.2437364",
language = "English",
volume = "15",
pages = "319--325",
journal = "IEEE Transactions on Device and Materials Reliability",
issn = "1530-4388",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "3",

}

Analysis of Intrinsic Charge Loss Mechanisms for Nanoscale NAND Flash Memory. / Lim, Jun Yeong; Moon, Pyung; Lee, Sang Myung; Noh, Keum Whan; Youn, Tae Un; Kim, Jong Wook; Yun, Ilgu.

In: IEEE Transactions on Device and Materials Reliability, Vol. 15, No. 3, 7112489, 01.09.2015, p. 319-325.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Analysis of Intrinsic Charge Loss Mechanisms for Nanoscale NAND Flash Memory

AU - Lim, Jun Yeong

AU - Moon, Pyung

AU - Lee, Sang Myung

AU - Noh, Keum Whan

AU - Youn, Tae Un

AU - Kim, Jong Wook

AU - Yun, Ilgu

PY - 2015/9/1

Y1 - 2015/9/1

N2 - In the current memory market, many researchers have analyzed the data retention characteristic and predicted the related leakage mechanism. Most studies have shown that the dominant degradation of retention characteristics of Flash memory occurs in the tunneling oxide after program/erase cycling. However, serious degradation of the retention characteristics is also seen in the intrinsic situation before program/erase cycling of devices through the oxide-nitride-oxide (ONO) interpoly dielectric. In this paper, we analyze that degradation by examining the various charge loss mechanisms of the device before cycling and extract two appropriate charge loss mechanisms by comparing the measured V-th data with the TCAD simulation data, and we verify the mechanisms by extracting the activation energy of each mechanism. We also analyze the effects on those two mechanisms as the ONO thickness and temperature are changed. Based on the results, we establish the intrinsic leakage mechanism through the ONO layers and predict the change in leakage mechanism as the thickness of the ONO layers is decreased.

AB - In the current memory market, many researchers have analyzed the data retention characteristic and predicted the related leakage mechanism. Most studies have shown that the dominant degradation of retention characteristics of Flash memory occurs in the tunneling oxide after program/erase cycling. However, serious degradation of the retention characteristics is also seen in the intrinsic situation before program/erase cycling of devices through the oxide-nitride-oxide (ONO) interpoly dielectric. In this paper, we analyze that degradation by examining the various charge loss mechanisms of the device before cycling and extract two appropriate charge loss mechanisms by comparing the measured V-th data with the TCAD simulation data, and we verify the mechanisms by extracting the activation energy of each mechanism. We also analyze the effects on those two mechanisms as the ONO thickness and temperature are changed. Based on the results, we establish the intrinsic leakage mechanism through the ONO layers and predict the change in leakage mechanism as the thickness of the ONO layers is decreased.

UR - http://www.scopus.com/inward/record.url?scp=84940979380&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84940979380&partnerID=8YFLogxK

U2 - 10.1109/TDMR.2015.2437364

DO - 10.1109/TDMR.2015.2437364

M3 - Article

VL - 15

SP - 319

EP - 325

JO - IEEE Transactions on Device and Materials Reliability

JF - IEEE Transactions on Device and Materials Reliability

SN - 1530-4388

IS - 3

M1 - 7112489

ER -