Analysis of intrinsic retention characteristics for 2x-nm NAND flash memory using TCAD simulation

Jun Yeong Lim, Pyung Moon, Sang Myung Lee, Ilgu Yun

Research output: Contribution to journalArticle

Abstract

The retention characteristic of memory devices is an important issue as the size of the chip is scaled down continuously. However, it is hard to retain the reliable retention characteristic at smaller size of chip since the interference and leakage problems are induced by scaling down the chip. This paper suggests the main leakage mechanisms of 2x-nm flash memory at the pre-cycling situation by comparing the measurement Vth data with TCAD simulation to analyze this problem. Based on the results, we identify the failure mechanisms and factors which affect degradation of intrinsic retention characteristics.

Original languageEnglish
Pages (from-to)957-961
Number of pages5
JournalECS Transactions
Volume60
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

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