Analysis of intrinsic retention characteristics for 2x-nm NAND flash memory using TCAD simulation

Jun Yeong Lim, Pyung Moon, Sang Myung Lee, Ilgu Yun

Research output: Contribution to journalArticle

Abstract

The retention characteristic of memory devices is an important issue as the size of the chip is scaled down continuously. However, it is hard to retain the reliable retention characteristic at smaller size of chip since the interference and leakage problems are induced by scaling down the chip. This paper suggests the main leakage mechanisms of 2x-nm flash memory at the pre-cycling situation by comparing the measurement Vth data with TCAD simulation to analyze this problem. Based on the results, we identify the failure mechanisms and factors which affect degradation of intrinsic retention characteristics.

Original languageEnglish
Pages (from-to)957-961
Number of pages5
JournalECS Transactions
Volume60
Issue number1
DOIs
Publication statusPublished - 2014 Jan 1

Fingerprint

Flash memory
Data storage equipment
Degradation

All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Lim, Jun Yeong ; Moon, Pyung ; Lee, Sang Myung ; Yun, Ilgu. / Analysis of intrinsic retention characteristics for 2x-nm NAND flash memory using TCAD simulation. In: ECS Transactions. 2014 ; Vol. 60, No. 1. pp. 957-961.
@article{dcbb649bf2ee44b3b5ad5a1c3a7352d7,
title = "Analysis of intrinsic retention characteristics for 2x-nm NAND flash memory using TCAD simulation",
abstract = "The retention characteristic of memory devices is an important issue as the size of the chip is scaled down continuously. However, it is hard to retain the reliable retention characteristic at smaller size of chip since the interference and leakage problems are induced by scaling down the chip. This paper suggests the main leakage mechanisms of 2x-nm flash memory at the pre-cycling situation by comparing the measurement Vth data with TCAD simulation to analyze this problem. Based on the results, we identify the failure mechanisms and factors which affect degradation of intrinsic retention characteristics.",
author = "Lim, {Jun Yeong} and Pyung Moon and Lee, {Sang Myung} and Ilgu Yun",
year = "2014",
month = "1",
day = "1",
doi = "10.1149/06001.0957ecst",
language = "English",
volume = "60",
pages = "957--961",
journal = "ECS Transactions",
issn = "1938-5862",
publisher = "Electrochemical Society, Inc.",
number = "1",

}

Analysis of intrinsic retention characteristics for 2x-nm NAND flash memory using TCAD simulation. / Lim, Jun Yeong; Moon, Pyung; Lee, Sang Myung; Yun, Ilgu.

In: ECS Transactions, Vol. 60, No. 1, 01.01.2014, p. 957-961.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Analysis of intrinsic retention characteristics for 2x-nm NAND flash memory using TCAD simulation

AU - Lim, Jun Yeong

AU - Moon, Pyung

AU - Lee, Sang Myung

AU - Yun, Ilgu

PY - 2014/1/1

Y1 - 2014/1/1

N2 - The retention characteristic of memory devices is an important issue as the size of the chip is scaled down continuously. However, it is hard to retain the reliable retention characteristic at smaller size of chip since the interference and leakage problems are induced by scaling down the chip. This paper suggests the main leakage mechanisms of 2x-nm flash memory at the pre-cycling situation by comparing the measurement Vth data with TCAD simulation to analyze this problem. Based on the results, we identify the failure mechanisms and factors which affect degradation of intrinsic retention characteristics.

AB - The retention characteristic of memory devices is an important issue as the size of the chip is scaled down continuously. However, it is hard to retain the reliable retention characteristic at smaller size of chip since the interference and leakage problems are induced by scaling down the chip. This paper suggests the main leakage mechanisms of 2x-nm flash memory at the pre-cycling situation by comparing the measurement Vth data with TCAD simulation to analyze this problem. Based on the results, we identify the failure mechanisms and factors which affect degradation of intrinsic retention characteristics.

UR - http://www.scopus.com/inward/record.url?scp=84904981809&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84904981809&partnerID=8YFLogxK

U2 - 10.1149/06001.0957ecst

DO - 10.1149/06001.0957ecst

M3 - Article

VL - 60

SP - 957

EP - 961

JO - ECS Transactions

JF - ECS Transactions

SN - 1938-5862

IS - 1

ER -