Analysis of layers and interfaces in a multi-layer system and schematic simulation using angle-resolved X-ray photoelectron spectroscopy

Sun Gyu Choi, Hyung Ho Park, Hyeongtag Jeon, Ho Jung Chang

Research output: Contribution to journalArticle

Abstract

Standardization of an analytical procedure for bonding structure and thickness simulation of nanoscaled ultra thin films was established using the theoretical background of angle-resolved X-ray photoelectron spectroscopy (ARXPS). A structure simulation using ARXPS was designed and a software program with java language was provided for application to a high-k dielectric multilayer system. A thickness simulation was applied to a high-k dielectric layer on semiconductor system of about 2-3 nm Gd2O3/GaAs and compared to experimental results. Multilayer structure of high-k binary oxide system (HfO2 and Al2O3) was simulated by photoelectron flux ratio change and their multilayer stacking structures were analyzed with different each layer thickness.

Original languageEnglish
Pages (from-to)2398-2401
Number of pages4
JournalJournal of Computational and Theoretical Nanoscience
Volume6
Issue number11
DOIs
Publication statusPublished - 2009 Nov 1

Fingerprint

systems simulation
X-ray Spectroscopy
circuit diagrams
Schematic diagrams
Multilayer
Multilayers
X ray photoelectron spectroscopy
photoelectron spectroscopy
Angle
Simulation
x rays
simulation
Ultrathin films
standardization
Photoelectrons
Oxides
Standardization
laminates
Stacking
photoelectrons

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Computational Mathematics
  • Electrical and Electronic Engineering

Cite this

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abstract = "Standardization of an analytical procedure for bonding structure and thickness simulation of nanoscaled ultra thin films was established using the theoretical background of angle-resolved X-ray photoelectron spectroscopy (ARXPS). A structure simulation using ARXPS was designed and a software program with java language was provided for application to a high-k dielectric multilayer system. A thickness simulation was applied to a high-k dielectric layer on semiconductor system of about 2-3 nm Gd2O3/GaAs and compared to experimental results. Multilayer structure of high-k binary oxide system (HfO2 and Al2O3) was simulated by photoelectron flux ratio change and their multilayer stacking structures were analyzed with different each layer thickness.",
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Analysis of layers and interfaces in a multi-layer system and schematic simulation using angle-resolved X-ray photoelectron spectroscopy. / Choi, Sun Gyu; Park, Hyung Ho; Jeon, Hyeongtag; Chang, Ho Jung.

In: Journal of Computational and Theoretical Nanoscience, Vol. 6, No. 11, 01.11.2009, p. 2398-2401.

Research output: Contribution to journalArticle

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