Analysis of octadecyltrichlorosilane treatment of organic thin-film transistors using soft x-ray fluorescence spectroscopy

S. J. Kang, Y. Yi, C. Y. Kim, C. N. Whang, T. A. Callcott, K. Krochak, A. Moewes, G. S. Chang

Research output: Contribution to journalArticlepeer-review

21 Citations (Scopus)

Abstract

The effect of octadecyltrichlorosilane (OTS) treatment on the electronic properties of organic thin-film transistors is investigated using soft x-ray absorption and emission spectroscopy. Analysis of Carbon Kα x-ray emission spectra reveals that treating the SiO2 layer with OTS prior to pentacene deposition increases the number of π -bonding states in the active pentacene layer, which is strongly correlated with the conduction of charge carriers. The role of the increased π -bonding states is verified by measuring the current-voltage characteristics of pentacene thin-film transistors with and without OTS treatment. Drain current and field-effect mobility of OTS-treated samples are significantly enhanced as anticipated from the spectroscopic analysis.

Original languageEnglish
Article number232103
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number23
DOIs
Publication statusPublished - 2005 Jun 6

Bibliographical note

Funding Information:
This work is supported by BK21 project of the Korea Research Foundation, the Yonsei Center for Nano Technology, grants from the Natural Science and Engineering Research Council of Canada (NSERC), and the Saskatchewan Synchrotron Institute.

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Fingerprint Dive into the research topics of 'Analysis of octadecyltrichlorosilane treatment of organic thin-film transistors using soft x-ray fluorescence spectroscopy'. Together they form a unique fingerprint.

Cite this