Analysis of octadecyltrichlorosilane treatment of organic thin-film transistors using soft x-ray fluorescence spectroscopy

S. J. Kang, Y. Yi, C. Y. Kim, C. N. Whang, T. A. Callcott, K. Krochak, A. Moewes, G. S. Chang

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Abstract

The effect of octadecyltrichlorosilane (OTS) treatment on the electronic properties of organic thin-film transistors is investigated using soft x-ray absorption and emission spectroscopy. Analysis of Carbon Kα x-ray emission spectra reveals that treating the SiO2 layer with OTS prior to pentacene deposition increases the number of π -bonding states in the active pentacene layer, which is strongly correlated with the conduction of charge carriers. The role of the increased π -bonding states is verified by measuring the current-voltage characteristics of pentacene thin-film transistors with and without OTS treatment. Drain current and field-effect mobility of OTS-treated samples are significantly enhanced as anticipated from the spectroscopic analysis.

Original languageEnglish
Article number232103
Pages (from-to)1-3
Number of pages3
JournalApplied Physics Letters
Volume86
Issue number23
DOIs
Publication statusPublished - 2005 Jun 6

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All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this

Kang, S. J., Yi, Y., Kim, C. Y., Whang, C. N., Callcott, T. A., Krochak, K., Moewes, A., & Chang, G. S. (2005). Analysis of octadecyltrichlorosilane treatment of organic thin-film transistors using soft x-ray fluorescence spectroscopy. Applied Physics Letters, 86(23), 1-3. [232103]. https://doi.org/10.1063/1.1944900