Abstract
We analyzed the influence of the prove signal power on the wavelength conversion in an interferometric all optical wavelength converter using semiconductor optical amplifiers (SOAs). The carrier density variation reside an SOA due to longitudinal signal amplification and nonradiative recombination is investigated and the following variation of amplified spontaneous emission (ASE) is considered. In case of using a high probe signal power, the frequency response of the wavelength converter and bit error rate (BER) of the converted signal are improved as a result of the reductions of ASE noise and carrier lifetime.
| Original language | English |
|---|---|
| Pages (from-to) | 159-164 |
| Number of pages | 6 |
| Journal | Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers |
| Volume | 40 |
| Issue number | 1 |
| DOIs | |
| Publication status | Published - 2001 Jan |
All Science Journal Classification (ASJC) codes
- Engineering(all)
- Physics and Astronomy(all)
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Shin, S. M., Lee, M. H., & Han, S. K. (2001). Analysis of probe signal power dependence of all-optical wavelength converter using semiconductor optical amplifiers. Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, 40(1), 159-164. https://doi.org/10.1143/JJAP.40.159