Analysis of probe signal power dependence of all-optical wavelength converter using semiconductor optical amplifiers

S. M. Shin; M. H. Lee; S. K. Han

doi:10.1143/JJAP.40.159

Analysis of probe signal power dependence of all-optical wavelength converter using semiconductor optical amplifiers

S. M. Shin, M. H. Lee, S. K. Han

Department of Electrical and Electronic Engineering

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

We analyzed the influence of the prove signal power on the wavelength conversion in an interferometric all optical wavelength converter using semiconductor optical amplifiers (SOAs). The carrier density variation reside an SOA due to longitudinal signal amplification and nonradiative recombination is investigated and the following variation of amplified spontaneous emission (ASE) is considered. In case of using a high probe signal power, the frequency response of the wavelength converter and bit error rate (BER) of the converted signal are improved as a result of the reductions of ASE noise and carrier lifetime.

Original language	English
Pages (from-to)	159-164
Number of pages	6
Journal	Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers
Volume	40
Issue number	1
DOIs	https://doi.org/10.1143/JJAP.40.159
Publication status	Published - 2001 Jan

All Science Journal Classification (ASJC) codes

Engineering(all)
Physics and Astronomy(all)

Access to Document

10.1143/JJAP.40.159

Fingerprint Dive into the research topics of 'Analysis of probe signal power dependence of all-optical wavelength converter using semiconductor optical amplifiers'. Together they form a unique fingerprint.

Cite this

@article{d2fc7e40578b4c8fa4b8add9c8bfbf7e,

title = "Analysis of probe signal power dependence of all-optical wavelength converter using semiconductor optical amplifiers",

abstract = "We analyzed the influence of the prove signal power on the wavelength conversion in an interferometric all optical wavelength converter using semiconductor optical amplifiers (SOAs). The carrier density variation reside an SOA due to longitudinal signal amplification and nonradiative recombination is investigated and the following variation of amplified spontaneous emission (ASE) is considered. In case of using a high probe signal power, the frequency response of the wavelength converter and bit error rate (BER) of the converted signal are improved as a result of the reductions of ASE noise and carrier lifetime.",

author = "Shin, {S. M.} and Lee, {M. H.} and Han, {S. K.}",

year = "2001",

month = jan,

doi = "10.1143/JJAP.40.159",

language = "English",

volume = "40",

pages = "159--164",

journal = "Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "1",

}

TY - JOUR

T1 - Analysis of probe signal power dependence of all-optical wavelength converter using semiconductor optical amplifiers

AU - Shin, S. M.

AU - Lee, M. H.

AU - Han, S. K.

PY - 2001/1

Y1 - 2001/1

N2 - We analyzed the influence of the prove signal power on the wavelength conversion in an interferometric all optical wavelength converter using semiconductor optical amplifiers (SOAs). The carrier density variation reside an SOA due to longitudinal signal amplification and nonradiative recombination is investigated and the following variation of amplified spontaneous emission (ASE) is considered. In case of using a high probe signal power, the frequency response of the wavelength converter and bit error rate (BER) of the converted signal are improved as a result of the reductions of ASE noise and carrier lifetime.

AB - We analyzed the influence of the prove signal power on the wavelength conversion in an interferometric all optical wavelength converter using semiconductor optical amplifiers (SOAs). The carrier density variation reside an SOA due to longitudinal signal amplification and nonradiative recombination is investigated and the following variation of amplified spontaneous emission (ASE) is considered. In case of using a high probe signal power, the frequency response of the wavelength converter and bit error rate (BER) of the converted signal are improved as a result of the reductions of ASE noise and carrier lifetime.

UR - http://www.scopus.com/inward/record.url?scp=0035062291&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035062291&partnerID=8YFLogxK

U2 - 10.1143/JJAP.40.159

DO - 10.1143/JJAP.40.159

M3 - Article

AN - SCOPUS:0035062291

VL - 40

SP - 159

EP - 164

JO - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

JF - Japanese Journal of Applied Physics, Part 1: Regular Papers & Short Notes

SN - 0021-4922

IS - 1

ER -