Analysis of self-heating effect on short channel amorphous ingazno thin-film transistors

Seok Woo Lee; Pyo Jin Jeon; Kyunghee Choi; Sung Wook Min; Hyeokjae Kwon; Seongil Im

doi:10.1109/LED.2015.2411742

Analysis of self-heating effect on short channel amorphous ingazno thin-film transistors

Seok Woo Lee, Pyo Jin Jeon, Kyunghee Choi, Sung Wook Min, Hyeokjae Kwon, Seongil Im

Department of Physics

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We report on a thin-flim transistor (TFT) degradation encountered in short channel amorphous indium-gallium-zinc-oxide TFTs under high applied power condition leading to self-heating. Negative shift was observed in the initial stage of stress period followed by positive shift with severe degradation. To understand the causes of this phenomenon in depth, trap density-of-states were measured by photo-excited charge-collection spectroscopy and time-dependent recovery of stressed device samples was also studied. As a result, we found that the combination of hot carrier effect and self-heating in channel was responsible for the degradation.

Original language	English
Article number	7057649
Pages (from-to)	472-474
Number of pages	3
Journal	IEEE Electron Device Letters
Volume	36
Issue number	5
DOIs	https://doi.org/10.1109/LED.2015.2411742
Publication status	Published - 2015 May 1

Bibliographical note

Publisher Copyright:
© 1980-2012 IEEE.

All Science Journal Classification (ASJC) codes

Electronic, Optical and Magnetic Materials
Electrical and Electronic Engineering

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10.1109/LED.2015.2411742

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AU - Kwon, Hyeokjae

AU - Im, Seongil

PY - 2015/5/1

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AB - We report on a thin-flim transistor (TFT) degradation encountered in short channel amorphous indium-gallium-zinc-oxide TFTs under high applied power condition leading to self-heating. Negative shift was observed in the initial stage of stress period followed by positive shift with severe degradation. To understand the causes of this phenomenon in depth, trap density-of-states were measured by photo-excited charge-collection spectroscopy and time-dependent recovery of stressed device samples was also studied. As a result, we found that the combination of hot carrier effect and self-heating in channel was responsible for the degradation.

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Analysis of self-heating effect on short channel amorphous ingazno thin-film transistors

Abstract

Bibliographical note

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