Abstract
We report on a thin-flim transistor (TFT) degradation encountered in short channel amorphous indium-gallium-zinc-oxide TFTs under high applied power condition leading to self-heating. Negative shift was observed in the initial stage of stress period followed by positive shift with severe degradation. To understand the causes of this phenomenon in depth, trap density-of-states were measured by photo-excited charge-collection spectroscopy and time-dependent recovery of stressed device samples was also studied. As a result, we found that the combination of hot carrier effect and self-heating in channel was responsible for the degradation.
Original language | English |
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Article number | 7057649 |
Pages (from-to) | 472-474 |
Number of pages | 3 |
Journal | IEEE Electron Device Letters |
Volume | 36 |
Issue number | 5 |
DOIs | |
Publication status | Published - 2015 May 1 |
Bibliographical note
Publisher Copyright:© 1980-2012 IEEE.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering