Analysis of the line pattern width and exposure efficiency in maskless lithography using a digital micromirror device

Hoonchul Ryoo, Dong Won Kang, Jae Won Hahn

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

In this study, we calculate the exposure intensity of line/space patterns recorded with a DMD (digital micromirror device) digital maskless lithography system using the point array method. With a diffracted beam spot with a radius of 4 μm, we simulate the line space patterns over a spot overlap section ranging from 85% to 95%. From the results of the simulation, we analyze the relationships among the exposure intensity, the width of the line pattern, and the exposure efficiency, which are process parameters used in maskless lithography. From a numerical analysis of the relationship between the line pattern width and the exposure efficiency, it is estimated that the practical acceptable minimum width of the line pattern recorded with a maskless lithography system using a 4-μm radius diffracted beam spot array is approximately 4.5 μm, which is 11% larger than the spot radius with the exposure efficiency of 73%.

Original languageEnglish
Pages (from-to)3145-3149
Number of pages5
JournalMicroelectronic Engineering
Volume88
Issue number10
DOIs
Publication statusPublished - 2011 Oct 1

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Digital devices
Lithography
lithography
radii
Numerical analysis
numerical analysis
simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

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abstract = "In this study, we calculate the exposure intensity of line/space patterns recorded with a DMD (digital micromirror device) digital maskless lithography system using the point array method. With a diffracted beam spot with a radius of 4 μm, we simulate the line space patterns over a spot overlap section ranging from 85{\%} to 95{\%}. From the results of the simulation, we analyze the relationships among the exposure intensity, the width of the line pattern, and the exposure efficiency, which are process parameters used in maskless lithography. From a numerical analysis of the relationship between the line pattern width and the exposure efficiency, it is estimated that the practical acceptable minimum width of the line pattern recorded with a maskless lithography system using a 4-μm radius diffracted beam spot array is approximately 4.5 μm, which is 11{\%} larger than the spot radius with the exposure efficiency of 73{\%}.",
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Analysis of the line pattern width and exposure efficiency in maskless lithography using a digital micromirror device. / Ryoo, Hoonchul; Kang, Dong Won; Hahn, Jae Won.

In: Microelectronic Engineering, Vol. 88, No. 10, 01.10.2011, p. 3145-3149.

Research output: Contribution to journalArticle

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