Analysis of thermal variation of dram retention time

M. H. Cho, Y. I. Kim, D. S. Woo, S. W. Kim, M. S. Shim, Y. J. Park, W. S. Lee, B. I. Ryu

Research output: Chapter in Book/Report/Conference proceedingConference contribution

8 Citations (Scopus)

Abstract

Variation of DRAM retention time induced by thermal stress was investigated. Thermal activation energies (Ea,) of sub-threshold leakage, junction leakage and GIDL (Gate Induced Drain Leakage) current of a DRAM cell were measured using the test vehicles. The values were compared with Ea of 1/tREF for the DRAM cell of which the retention time had been varied after a thermal stress. Ea of 1/tREF for the thermally degraded DRAM cell was in the range of that for GIDL current, while E a for the normal DRAM cells with high retention time was in the range of Ea for junction leakage. It is insisted that the thermal degradation of retention time is induced by increase in GIDL current. The contributions of gate oxide/substrate interface states to the GIDL current are discussed.

Original languageEnglish
Title of host publication2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual
Pages433-436
Number of pages4
DOIs
Publication statusPublished - 2006 Dec 1
Event44th Annual IEEE International Reliability Physics Symposium, IRPS 2006 - San Jose, CA, United States
Duration: 2006 Mar 262006 Mar 30

Publication series

NameIEEE International Reliability Physics Symposium Proceedings
ISSN (Print)1541-7026

Other

Other44th Annual IEEE International Reliability Physics Symposium, IRPS 2006
CountryUnited States
CitySan Jose, CA
Period06/3/2606/3/30

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All Science Journal Classification (ASJC) codes

  • Engineering(all)

Cite this

Cho, M. H., Kim, Y. I., Woo, D. S., Kim, S. W., Shim, M. S., Park, Y. J., Lee, W. S., & Ryu, B. I. (2006). Analysis of thermal variation of dram retention time. In 2006 IEEE International Reliability Physics Symposium Proceedings, 44th Annual (pp. 433-436). [4017198] (IEEE International Reliability Physics Symposium Proceedings). https://doi.org/10.1109/RELPHY.2006.251257