TY - GEN
T1 - Analysis of transmission performance enhancement with injection-locked semiconductor lasers
AU - Seo, Young Kwang
AU - Choi, Woo Young
N1 - Publisher Copyright:
© 1999 IEEE.
Copyright:
Copyright 2018 Elsevier B.V., All rights reserved.
PY - 1999
Y1 - 1999
N2 - It is well known that directly modulated semiconductor lasers have significant amounts of frequency chirping during modulation and this limits the performance of long-distance high speed fiber-optic communication systems [l]. One of the methods that can overcome this limitation is using injection-locked semiconductor lasers. Injection-locked semiconductor lasers can offer reduced chirping [2] and larger modulation bandwidth [3-41 with the proper adjustment of injection parameters such as injection ratio and frequency detuning. In this paper, the large signal characteristics of injection-locked semiconductor lasers and their performances in optical transmission systems are analyzed in detail. The rate equations for a single-mode semiconductor laser under optical injection [5] are numerically solved for the NRZ modulation format at the bit rate of 2.5 Gbps. The configuration used for the simulation is illustrated in Fig. 1. The laser parameters are obtained from [ 11, where the linewidth enhancement factor of 5 is used. The emitting power of the slave laser (SL) is maintained at about 3 mW for on state and 1 mW for off state, regardless of the injected optical power.
AB - It is well known that directly modulated semiconductor lasers have significant amounts of frequency chirping during modulation and this limits the performance of long-distance high speed fiber-optic communication systems [l]. One of the methods that can overcome this limitation is using injection-locked semiconductor lasers. Injection-locked semiconductor lasers can offer reduced chirping [2] and larger modulation bandwidth [3-41 with the proper adjustment of injection parameters such as injection ratio and frequency detuning. In this paper, the large signal characteristics of injection-locked semiconductor lasers and their performances in optical transmission systems are analyzed in detail. The rate equations for a single-mode semiconductor laser under optical injection [5] are numerically solved for the NRZ modulation format at the bit rate of 2.5 Gbps. The configuration used for the simulation is illustrated in Fig. 1. The laser parameters are obtained from [ 11, where the linewidth enhancement factor of 5 is used. The emitting power of the slave laser (SL) is maintained at about 3 mW for on state and 1 mW for off state, regardless of the injected optical power.
UR - http://www.scopus.com/inward/record.url?scp=0033342675&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0033342675&partnerID=8YFLogxK
U2 - 10.1109/CLEOPR.1999.817899
DO - 10.1109/CLEOPR.1999.817899
M3 - Conference contribution
AN - SCOPUS:0033342675
T3 - CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
SP - 916
EP - 917
BT - CLEO/Pacific Rim 1999 - Pacific Rim Conference on Lasers and Electro-Optics
PB - Institute of Electrical and Electronics Engineers Inc.
T2 - 1999 Pacific Rim Conference on Lasers and Electro-Optics, CLEO/Pacific Rim 1999
Y2 - 30 August 1999 through 3 September 1999
ER -