Analysis on Sensing Yield of Voltage Latched Sense Amplifier for Low Power DRAM

Suk Min Kim, Byungkyu Song, Tae Woo Oh, Seong Ook Jung

Research output: Chapter in Book/Report/Conference proceedingConference contribution

1 Citation (Scopus)

Abstract

Various types of sense amplifiers are widely used in memory products. In this paper, we have studied on the optimization of a voltage latched sense amplifier (VLSA) with 65nm CMOS process for low-power DRAM. In particular, we have classified sensing failure into the offset failure and the latch-delay failure, and have found that the latch-delay failure becomes even worse at low supply voltages below 1.0V. We also found that conventional NMOS-driven sensing operation was no longer effective on VLSA for low supply voltage, and investigated various methods to decrease the latch-delay failure probability.

Original languageEnglish
Title of host publicationPRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics
PublisherInstitute of Electrical and Electronics Engineers Inc.
Pages65-68
Number of pages4
ISBN (Print)9781538653869
DOIs
Publication statusPublished - 2018 Aug 8
Event14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018 - Prague, Czech Republic
Duration: 2018 Jul 22018 Jul 5

Publication series

NamePRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics

Other

Other14th Conference on Ph.D. Research in Microelectronics and Electronics, PRIME 2018
CountryCzech Republic
CityPrague
Period18/7/218/7/5

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All Science Journal Classification (ASJC) codes

  • Electrical and Electronic Engineering
  • Electronic, Optical and Magnetic Materials
  • Instrumentation

Cite this

Kim, S. M., Song, B., Oh, T. W., & Jung, S. O. (2018). Analysis on Sensing Yield of Voltage Latched Sense Amplifier for Low Power DRAM. In PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics (pp. 65-68). [8430359] (PRIME 2018 - 14th Conference on Ph.D. Research in Microelectronics and Electronics). Institute of Electrical and Electronics Engineers Inc.. https://doi.org/10.1109/PRIME.2018.8430359