Analytical Model for Junctionless Double-Gate FET in Subthreshold Region

Yong Hyeon Shin, Sungwoo Weon, Daesik Hong, Ilgu Yun

Research output: Contribution to journalArticle

5 Citations (Scopus)

Abstract

An analytical model for junctionless double-gate FETs (JLDGFETs) in the subthreshold region is proposed in this paper. As the analytical models based on Young's approximation demonstrate certain limitations due to the heavily doped channel of the JLDGFET, it is essential to model the electrical characteristics of a JLDGFET using alternative methods. Therefore, in this paper, by using the Fourier series and Green's function, the potential distribution (φ (x,y)) in the channel is solved, and the hot-carrier effects and random dopant fluctuation are modeled using localized trap charges and macroscopic analysis. Using the calculated φ (x, y), IDS and Vth are solved analytically with respect to various L and tox variations, subthreshold swing, the drain-induced barrier lowering, the localized trap charges, and a single impurity dopant. All results from the analytical model are verified through comparisons with commercially available 2-D ATLAS numerical simulation results.

Original languageEnglish
Article number7859381
Pages (from-to)1433-1440
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume64
Issue number4
DOIs
Publication statusPublished - 2017 Apr 1

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Field effect transistors
Analytical models
Doping (additives)
Hot carriers
Fourier series
Green's function
Impurities
Computer simulation

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

Cite this

@article{732b0fb72b5744d9b90dabdbb6026a5f,
title = "Analytical Model for Junctionless Double-Gate FET in Subthreshold Region",
abstract = "An analytical model for junctionless double-gate FETs (JLDGFETs) in the subthreshold region is proposed in this paper. As the analytical models based on Young's approximation demonstrate certain limitations due to the heavily doped channel of the JLDGFET, it is essential to model the electrical characteristics of a JLDGFET using alternative methods. Therefore, in this paper, by using the Fourier series and Green's function, the potential distribution (φ (x,y)) in the channel is solved, and the hot-carrier effects and random dopant fluctuation are modeled using localized trap charges and macroscopic analysis. Using the calculated φ (x, y), IDS and Vth are solved analytically with respect to various L and tox variations, subthreshold swing, the drain-induced barrier lowering, the localized trap charges, and a single impurity dopant. All results from the analytical model are verified through comparisons with commercially available 2-D ATLAS numerical simulation results.",
author = "Shin, {Yong Hyeon} and Sungwoo Weon and Daesik Hong and Ilgu Yun",
year = "2017",
month = "4",
day = "1",
doi = "10.1109/TED.2017.2664825",
language = "English",
volume = "64",
pages = "1433--1440",
journal = "IEEE Transactions on Electron Devices",
issn = "0018-9383",
publisher = "Institute of Electrical and Electronics Engineers Inc.",
number = "4",

}

Analytical Model for Junctionless Double-Gate FET in Subthreshold Region. / Shin, Yong Hyeon; Weon, Sungwoo; Hong, Daesik; Yun, Ilgu.

In: IEEE Transactions on Electron Devices, Vol. 64, No. 4, 7859381, 01.04.2017, p. 1433-1440.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Analytical Model for Junctionless Double-Gate FET in Subthreshold Region

AU - Shin, Yong Hyeon

AU - Weon, Sungwoo

AU - Hong, Daesik

AU - Yun, Ilgu

PY - 2017/4/1

Y1 - 2017/4/1

N2 - An analytical model for junctionless double-gate FETs (JLDGFETs) in the subthreshold region is proposed in this paper. As the analytical models based on Young's approximation demonstrate certain limitations due to the heavily doped channel of the JLDGFET, it is essential to model the electrical characteristics of a JLDGFET using alternative methods. Therefore, in this paper, by using the Fourier series and Green's function, the potential distribution (φ (x,y)) in the channel is solved, and the hot-carrier effects and random dopant fluctuation are modeled using localized trap charges and macroscopic analysis. Using the calculated φ (x, y), IDS and Vth are solved analytically with respect to various L and tox variations, subthreshold swing, the drain-induced barrier lowering, the localized trap charges, and a single impurity dopant. All results from the analytical model are verified through comparisons with commercially available 2-D ATLAS numerical simulation results.

AB - An analytical model for junctionless double-gate FETs (JLDGFETs) in the subthreshold region is proposed in this paper. As the analytical models based on Young's approximation demonstrate certain limitations due to the heavily doped channel of the JLDGFET, it is essential to model the electrical characteristics of a JLDGFET using alternative methods. Therefore, in this paper, by using the Fourier series and Green's function, the potential distribution (φ (x,y)) in the channel is solved, and the hot-carrier effects and random dopant fluctuation are modeled using localized trap charges and macroscopic analysis. Using the calculated φ (x, y), IDS and Vth are solved analytically with respect to various L and tox variations, subthreshold swing, the drain-induced barrier lowering, the localized trap charges, and a single impurity dopant. All results from the analytical model are verified through comparisons with commercially available 2-D ATLAS numerical simulation results.

UR - http://www.scopus.com/inward/record.url?scp=85013630918&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=85013630918&partnerID=8YFLogxK

U2 - 10.1109/TED.2017.2664825

DO - 10.1109/TED.2017.2664825

M3 - Article

VL - 64

SP - 1433

EP - 1440

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

SN - 0018-9383

IS - 4

M1 - 7859381

ER -