Analytical Model for Junctionless Double-Gate FET in Subthreshold Region

Yong Hyeon Shin, Sungwoo Weon, Daesik Hong, Ilgu Yun

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

An analytical model for junctionless double-gate FETs (JLDGFETs) in the subthreshold region is proposed in this paper. As the analytical models based on Young's approximation demonstrate certain limitations due to the heavily doped channel of the JLDGFET, it is essential to model the electrical characteristics of a JLDGFET using alternative methods. Therefore, in this paper, by using the Fourier series and Green's function, the potential distribution (φ (x,y)) in the channel is solved, and the hot-carrier effects and random dopant fluctuation are modeled using localized trap charges and macroscopic analysis. Using the calculated φ (x, y), IDS and Vth are solved analytically with respect to various L and tox variations, subthreshold swing, the drain-induced barrier lowering, the localized trap charges, and a single impurity dopant. All results from the analytical model are verified through comparisons with commercially available 2-D ATLAS numerical simulation results.

Original languageEnglish
Article number7859381
Pages (from-to)1433-1440
Number of pages8
JournalIEEE Transactions on Electron Devices
Volume64
Issue number4
DOIs
Publication statusPublished - 2017 Apr

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Electrical and Electronic Engineering

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