An analytical model for junctionless double-gate FETs (JLDGFETs) in the subthreshold region is proposed in this paper. As the analytical models based on Young's approximation demonstrate certain limitations due to the heavily doped channel of the JLDGFET, it is essential to model the electrical characteristics of a JLDGFET using alternative methods. Therefore, in this paper, by using the Fourier series and Green's function, the potential distribution (φ (x,y)) in the channel is solved, and the hot-carrier effects and random dopant fluctuation are modeled using localized trap charges and macroscopic analysis. Using the calculated φ (x, y), IDS and Vth are solved analytically with respect to various L and tox variations, subthreshold swing, the drain-induced barrier lowering, the localized trap charges, and a single impurity dopant. All results from the analytical model are verified through comparisons with commercially available 2-D ATLAS numerical simulation results.
Bibliographical notePublisher Copyright:
© 1963-2012 IEEE.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering