In this paper, we propose a compact model of the short-channel double-gate (DG) JFETs, which are devices intended for low-power logic applications. In order to make the current equation continuous through all operating conditions from the subthreshold to well above the threshold without nonphysical fitting parameters, mobile carriers in depletion regions are considered. For describing the short-channel behavior, relevant parameters extracted from the 2-D analytical solution of Poisson's equation are used to modify long-channel equations. The field-dependent mobility, velocity saturation, channel-length modulation, and drain-induced barrier lowering are considered in the short-channel analysis. Models for the DG JFET are verified through numerically simulated currentvoltage characteristics. Based on the model of the DG JFETs, the advantages of the DG JFETs over single-gate MOSFETswhich may have similar fabrication requirementswith the subthreshold regime are addressed.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering