Recently, as the data usage increases, the memory usage for storing the data also increases. A lot of researches have been done to reduce the production cost of the solid state drive (SSD) using NAND structure, which is widely used as a storage device along with the hard disk drive (HDD). One of them is to change the NAND structure from 2-D to 3-D by using the charge trap flash (CTF) technology, which is using nitride material (i.e., TANOS) in the floating gate instead of the conventional poly-silicon (i.e., SONOS). As the structure and material are changed, the characteristics of the device are also changed. One of the important functions of memory is the ability to preserve the data. Thus, in this paper the long-term evaluation of TANOS structure is investigated and the prediction of retention characteristic can be evaluated through the accelerated tests. We analyzed the behavior characteristics through experiments and Technology Computer Aided Design (TCAD) simulation to improve the accuracy of long-term data retention in TANOS (Tantalum-Alumina-Nitride-Oxide-Silicon) which is one of 3-D NAND. We also examined the effects of time and temperature about data retention by dividing them into four mechanisms: Schottky emission, Fowler-Nordheim (FN) tunneling, Poole-Frenkel (PF) emission, and trap-assisted tunneling.
|Title of host publication||2020 Pan Pacific Microelectronics Symposium, Pan Pacific 2020|
|Publisher||Institute of Electrical and Electronics Engineers Inc.|
|Publication status||Published - 2020 Feb|
|Event||2020 Pan Pacific Microelectronics Symposium, Pan Pacific 2020 - Kohala Coast, United States|
Duration: 2020 Feb 10 → 2020 Feb 13
|Name||2020 Pan Pacific Microelectronics Symposium, Pan Pacific 2020|
|Conference||2020 Pan Pacific Microelectronics Symposium, Pan Pacific 2020|
|Period||20/2/10 → 20/2/13|
Bibliographical notePublisher Copyright:
© 2020 SMTA.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Electrical and Electronic Engineering
- Mechanics of Materials
- Safety, Risk, Reliability and Quality