Angular rotation of magnetic hysteresis of ion-irradiated ferromagnetic thin films

G. S. Chang; T. A. Callcott; G. P. Zhang; G. T. Woods; S. H. Kim; S. W. Shin; K. Jeong; C. N. Whang; A. Moewes

doi:10.1063/1.1515370

Angular rotation of magnetic hysteresis of ion-irradiated ferromagnetic thin films

G. S. Chang, T. A. Callcott, G. P. Zhang, G. T. Woods, S. H. Kim, S. W. Shin, K. Jeong, C. N. Whang, A. Moewes

Department of Physics

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

The magnetization direction of a cobalt-platinum film has been manipulated by magnetic-field-assisted ion-beam mixing. A uniaxial easy magnetization axis is induced along the oscillation direction of the incident beam of 80 keV Ar⁺ ions. The easy axis was then rotated by 60°, when the same ion irradiation process was carried out in the presence of an external magnetic field. Magnetic force microscopy measurements show that line shaped domain structures are created with their long axis along the induced magnetization directions. It is proposed that the creation of adjacent regions with orthogonal magnetization can play a crucial role in stabilizing the magnetostatic dipolar interaction between adjacent bits of magnetic data storage devices.

Original language	English
Pages (from-to)	3016-3018
Number of pages	3
Journal	Applied Physics Letters
Volume	81
Issue number	16
DOIs	https://doi.org/10.1063/1.1515370
Publication status	Published - 2002 Oct 14

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.1515370

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title = "Angular rotation of magnetic hysteresis of ion-irradiated ferromagnetic thin films",

abstract = "The magnetization direction of a cobalt-platinum film has been manipulated by magnetic-field-assisted ion-beam mixing. A uniaxial easy magnetization axis is induced along the oscillation direction of the incident beam of 80 keV Ar+ ions. The easy axis was then rotated by 60°, when the same ion irradiation process was carried out in the presence of an external magnetic field. Magnetic force microscopy measurements show that line shaped domain structures are created with their long axis along the induced magnetization directions. It is proposed that the creation of adjacent regions with orthogonal magnetization can play a crucial role in stabilizing the magnetostatic dipolar interaction between adjacent bits of magnetic data storage devices.",

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AU - Chang, G. S.

AU - Callcott, T. A.

AU - Zhang, G. P.

AU - Woods, G. T.

AU - Kim, S. H.

AU - Shin, S. W.

AU - Jeong, K.

AU - Whang, C. N.

AU - Moewes, A.

PY - 2002/10/14

Y1 - 2002/10/14

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