Anion-migration-induced bipolar resistance switching in electrochemically deposited TiOx films

Sunghoon Lee, Heedo Na, Jonggi Kim, Jiwon Moon, Hyunchul Sohn

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8 Citations (Scopus)

Abstract

TiOx films were electrochemically deposited on TiN and Pt electrodes with a subsequent annealing under N2 or O2 ambient. The resistive switching characteristics of such TiOx films were investigated. The electrodeposited TiOx films showed bipolar resistive switching and the operation voltages such as electroforming voltage, and reset/set voltages showed a dependence on the annealing ambient, displaying higher operation voltages for the annealing under O2 than for the annealing under N2. The compositions of the different chemical states of species in TiOx films were observed to be modulated by the condition of electrochemical deposition and the subsequent annealing. The TiOx films annealed under the O2 ambient showed a less concentration of nonlattice oxygen ions than under N2 ambient. The reduction of nonlattice oxygen for annealing under O2 was accompanied by the increase of Ti3+ in TiOx films and the increased reset/set voltages. It was concluded that the bipolar resistive switching of the electrochemically deposited Ti Ox film was strongly related to the nonlattice oxygen anions in the films.

Original languageEnglish
Pages (from-to)H88-H92
JournalJournal of the Electrochemical Society
Volume158
Issue number2
DOIs
Publication statusPublished - 2011 Jan 5

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Renewable Energy, Sustainability and the Environment
  • Surfaces, Coatings and Films
  • Electrochemistry
  • Materials Chemistry

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