Annealing behavior of Pd/GaN (0001) microstructure

C. C. Kim, J. H. Je, D. W. Kim, H. K. Baik, S. M. Lee, Pierre Ruterana

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN (0001) at room temperature. The origin of the Pd epitaxy was attributed to 6/7 matched interface structure. The Pd film was completely transformed to Ga2Pd5 and Ga5Pd gallides in epitaxial relationships with GaN at an annealing temperature of 700°C.

Original languageEnglish
Pages (from-to)105-107
Number of pages3
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume82
Issue number1-3
DOIs
Publication statusPublished - 2001 May 22

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

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