Annealing behavior of Pd/GaN (0001) microstructure

C. C. Kim, J. H. Je, D. W. Kim, Hong Koo Baik, S. M. Lee, Pierre Ruterana

Research output: Contribution to journalArticle

10 Citations (Scopus)

Abstract

We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN (0001) at room temperature. The origin of the Pd epitaxy was attributed to 6/7 matched interface structure. The Pd film was completely transformed to Ga2Pd5 and Ga5Pd gallides in epitaxial relationships with GaN at an annealing temperature of 700°C.

Original languageEnglish
Pages (from-to)105-107
Number of pages3
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume82
Issue number1-3
DOIs
Publication statusPublished - 2001 May 22

Fingerprint

Annealing
microstructure
Microstructure
annealing
Epitaxial growth
epitaxy
Temperature
room temperature
temperature

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Kim, C. C. ; Je, J. H. ; Kim, D. W. ; Baik, Hong Koo ; Lee, S. M. ; Ruterana, Pierre. / Annealing behavior of Pd/GaN (0001) microstructure. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2001 ; Vol. 82, No. 1-3. pp. 105-107.
@article{50b81fcc9697435898364f2d52b5b3fa,
title = "Annealing behavior of Pd/GaN (0001) microstructure",
abstract = "We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN (0001) at room temperature. The origin of the Pd epitaxy was attributed to 6/7 matched interface structure. The Pd film was completely transformed to Ga2Pd5 and Ga5Pd gallides in epitaxial relationships with GaN at an annealing temperature of 700°C.",
author = "Kim, {C. C.} and Je, {J. H.} and Kim, {D. W.} and Baik, {Hong Koo} and Lee, {S. M.} and Pierre Ruterana",
year = "2001",
month = "5",
day = "22",
doi = "10.1016/S0921-5107(00)00761-3",
language = "English",
volume = "82",
pages = "105--107",
journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",
issn = "0921-5107",
publisher = "Elsevier BV",
number = "1-3",

}

Annealing behavior of Pd/GaN (0001) microstructure. / Kim, C. C.; Je, J. H.; Kim, D. W.; Baik, Hong Koo; Lee, S. M.; Ruterana, Pierre.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 82, No. 1-3, 22.05.2001, p. 105-107.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Annealing behavior of Pd/GaN (0001) microstructure

AU - Kim, C. C.

AU - Je, J. H.

AU - Kim, D. W.

AU - Baik, Hong Koo

AU - Lee, S. M.

AU - Ruterana, Pierre

PY - 2001/5/22

Y1 - 2001/5/22

N2 - We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN (0001) at room temperature. The origin of the Pd epitaxy was attributed to 6/7 matched interface structure. The Pd film was completely transformed to Ga2Pd5 and Ga5Pd gallides in epitaxial relationships with GaN at an annealing temperature of 700°C.

AB - We reveal the existence of interfacial, epitaxial, Pd grains in an as-deposited Pd film evaporated on GaN (0001) at room temperature. The origin of the Pd epitaxy was attributed to 6/7 matched interface structure. The Pd film was completely transformed to Ga2Pd5 and Ga5Pd gallides in epitaxial relationships with GaN at an annealing temperature of 700°C.

UR - http://www.scopus.com/inward/record.url?scp=0035933098&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=0035933098&partnerID=8YFLogxK

U2 - 10.1016/S0921-5107(00)00761-3

DO - 10.1016/S0921-5107(00)00761-3

M3 - Article

VL - 82

SP - 105

EP - 107

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

SN - 0921-5107

IS - 1-3

ER -