Annealing effect on the magnetoresistance in La0.75Ca0.25MnO3 thin films grown on Si (100) substrates

Jong Cheol Lee, Dong Gyun You, Sang Yub Ie, Myeon Chang Sung, Ho Shik Song, Hyun Soon Park, Sei Kwon Kang, Sam Hyeon Lee, Kwangho Jeong, Sam Jin Kim, Chul Sung Kim

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Abstract

Polycrystalline La0.75Ca0.25MnO3 thin films have been grown by rf magnetron sputtering on Si (100) substrates. The physical properties (lattice parameter, transition temperature, and activation energy) of the thin films were changed after annealing in oxygen. We obtained significantly improved magnetoresistance (MR) (Δρ/ρ0) values with the annealed films; 0.34, 0.29, and 0.27 at 1.5 T field for the films with deposition temperatures 700°C, 750°C and 800°C, respectively. We investigated the effect of the out-of-plane lattice parameters on MR and transition temperature. Annealing effect on the change of the physical properties is discussed for the films. We suggest that oxygen refilling decreases the Mn-O-Mn bond angles as well as increases Mn4+/Mn3+ ratio. As a result, both out-of-plane lattice parameter and resistivity are reduced, while activation energy and the metal-insulator transition temperature are increased.

Original languageEnglish
Pages (from-to)221-224
Number of pages4
JournalJournal of Applied Physics
Volume91
Issue number1
DOIs
Publication statusPublished - 2002 Jan 1

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy(all)

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    Lee, J. C., You, D. G., Ie, S. Y., Sung, M. C., Song, H. S., Park, H. S., Kang, S. K., Lee, S. H., Jeong, K., Jin Kim, S., & Sung Kim, C. (2002). Annealing effect on the magnetoresistance in La0.75Ca0.25MnO3 thin films grown on Si (100) substrates. Journal of Applied Physics, 91(1), 221-224. https://doi.org/10.1063/1.1417989