Annealing effect on the structural and optical properties of ZnO thin film on InP

Eun Sub Shim, Hong Seong Kang, Seong Sik Pang, Jeong Seok Kang, Ilgu Yun, Sang Yeol Lee

Research output: Contribution to journalConference article

69 Citations (Scopus)

Abstract

II-VI semiconducting ZnO thin films have been fabricated by pulsed laser deposition (PLD) process on indium phosphide (InP) (100) substrates. Thin films were annealed at various temperatures in order to study the annealing temperature dependence of the structural and optical properties of ZnO thin film grown on InP substrate. The structural and optical properties were characterized with X-ray diffraction (XRD) and photoluminescence (PL), respectively. In our study, we have found some defect levels from the PL spectra and derived the defect center's activation energy. According to XRD data, it could be thought that the films had some strains but relaxed by annealing processes.

Original languageEnglish
Pages (from-to)366-369
Number of pages4
JournalMaterials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume102
Issue number1-3
DOIs
Publication statusPublished - 2003 Sep 15
EventE-MRS 2002 Symposium E - Strasbourg, France
Duration: 2002 Jun 182002 Jun 21

Fingerprint

Indium phosphide
indium phosphides
Structural properties
Optical properties
Annealing
optical properties
Thin films
annealing
Photoluminescence
thin films
Semiconducting films
photoluminescence
X ray diffraction
Defects
defects
Substrates
Pulsed laser deposition
diffraction
pulsed laser deposition
x rays

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

Shim, Eun Sub ; Kang, Hong Seong ; Pang, Seong Sik ; Kang, Jeong Seok ; Yun, Ilgu ; Lee, Sang Yeol. / Annealing effect on the structural and optical properties of ZnO thin film on InP. In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology. 2003 ; Vol. 102, No. 1-3. pp. 366-369.
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Annealing effect on the structural and optical properties of ZnO thin film on InP. / Shim, Eun Sub; Kang, Hong Seong; Pang, Seong Sik; Kang, Jeong Seok; Yun, Ilgu; Lee, Sang Yeol.

In: Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 102, No. 1-3, 15.09.2003, p. 366-369.

Research output: Contribution to journalConference article

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T1 - Annealing effect on the structural and optical properties of ZnO thin film on InP

AU - Shim, Eun Sub

AU - Kang, Hong Seong

AU - Pang, Seong Sik

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AU - Lee, Sang Yeol

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AB - II-VI semiconducting ZnO thin films have been fabricated by pulsed laser deposition (PLD) process on indium phosphide (InP) (100) substrates. Thin films were annealed at various temperatures in order to study the annealing temperature dependence of the structural and optical properties of ZnO thin film grown on InP substrate. The structural and optical properties were characterized with X-ray diffraction (XRD) and photoluminescence (PL), respectively. In our study, we have found some defect levels from the PL spectra and derived the defect center's activation energy. According to XRD data, it could be thought that the films had some strains but relaxed by annealing processes.

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