Annealing effects of aluminum silicate films grown on Si(100)

M. H. Cho, Y. S. Rho, H. J. Choi, S. W. Nam, D. H. Ko, J. H. Ku, H. C. Kang, D. Y. Noh, C. N. Whang, K. Jeong

Research output: Contribution to journalArticle

25 Citations (Scopus)

Abstract

The physical and electrical characteristics of Al silicate film were studied depending on the annealing temperature. The structure of the film was changed from amorphous to crystalline structure as postannealing temperature increases. The interfacial layer thickness and the stoichiometry at the interfacial region significantly influenced the electrical properties such as trap charge densities and conduction process.

Original languageEnglish
Pages (from-to)865-872
Number of pages8
JournalJournal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films
Volume20
Issue number3
DOIs
Publication statusPublished - 2002 Jan 1

Fingerprint

Aluminum Silicates
aluminum silicates
Silicates
Annealing
Aluminum
annealing
Charge density
Stoichiometry
stoichiometry
silicates
Electric properties
electrical properties
traps
Crystalline materials
conduction
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Condensed Matter Physics
  • Surfaces and Interfaces
  • Surfaces, Coatings and Films

Cite this

Cho, M. H. ; Rho, Y. S. ; Choi, H. J. ; Nam, S. W. ; Ko, D. H. ; Ku, J. H. ; Kang, H. C. ; Noh, D. Y. ; Whang, C. N. ; Jeong, K. / Annealing effects of aluminum silicate films grown on Si(100). In: Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films. 2002 ; Vol. 20, No. 3. pp. 865-872.
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Annealing effects of aluminum silicate films grown on Si(100). / Cho, M. H.; Rho, Y. S.; Choi, H. J.; Nam, S. W.; Ko, D. H.; Ku, J. H.; Kang, H. C.; Noh, D. Y.; Whang, C. N.; Jeong, K.

In: Journal of Vacuum Science and Technology, Part A: Vacuum, Surfaces and Films, Vol. 20, No. 3, 01.01.2002, p. 865-872.

Research output: Contribution to journalArticle

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