Annealing effects of schottky contacts on the characteristics of 4H-SiC schottky barrier diodes

S. C. Kang, B. H. Kum, S. J. Do, J. H. Je, M. W. Shin

Research output: Contribution to journalConference article

3 Citations (Scopus)

Abstract

This paper reports on the relationship between the microstructure and the device performance of Pt/4H-SiC schottky barrier diodes (SBDs). The evolution of microstructure in the metal/SiC interfaces annealed at different temperatures was characterized using X-ray scattering techniques. The reverse characteristics of the devices were degraded with annealing temperatures. The maximum breakdown voltages of as-deposited devices and 850°C annealed devices are 1300 V and 626 V, respectively. However, the forward characteristics of the devices were found out to improve with annealing temperatures. X-ray scattering analysis showed that Pt-silicides were formed by annealing performed at or higher than 650°C. The formation of silicides was shown to increase the roughness of the Pt/SiC interface. It is believed that the forward characteristics of the SBDs be strongly dependent on the crystallity of silicides formed in the Pt/SiC interface during the annealing process.

Original languageEnglish
Pages (from-to)141-146
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Volume572
Publication statusPublished - 1999 Dec 1

Fingerprint

Schottky barrier diodes
Schottky diodes
Silicides
Annealing
silicides
annealing
X ray scattering
Microstructure
Electric breakdown
microstructure
Temperature
scattering
electrical faults
Surface roughness
Metals
temperature
x rays
roughness
metals

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering

Cite this

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abstract = "This paper reports on the relationship between the microstructure and the device performance of Pt/4H-SiC schottky barrier diodes (SBDs). The evolution of microstructure in the metal/SiC interfaces annealed at different temperatures was characterized using X-ray scattering techniques. The reverse characteristics of the devices were degraded with annealing temperatures. The maximum breakdown voltages of as-deposited devices and 850°C annealed devices are 1300 V and 626 V, respectively. However, the forward characteristics of the devices were found out to improve with annealing temperatures. X-ray scattering analysis showed that Pt-silicides were formed by annealing performed at or higher than 650°C. The formation of silicides was shown to increase the roughness of the Pt/SiC interface. It is believed that the forward characteristics of the SBDs be strongly dependent on the crystallity of silicides formed in the Pt/SiC interface during the annealing process.",
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Annealing effects of schottky contacts on the characteristics of 4H-SiC schottky barrier diodes. / Kang, S. C.; Kum, B. H.; Do, S. J.; Je, J. H.; Shin, M. W.

In: Materials Research Society Symposium - Proceedings, Vol. 572, 01.12.1999, p. 141-146.

Research output: Contribution to journalConference article

TY - JOUR

T1 - Annealing effects of schottky contacts on the characteristics of 4H-SiC schottky barrier diodes

AU - Kang, S. C.

AU - Kum, B. H.

AU - Do, S. J.

AU - Je, J. H.

AU - Shin, M. W.

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N2 - This paper reports on the relationship between the microstructure and the device performance of Pt/4H-SiC schottky barrier diodes (SBDs). The evolution of microstructure in the metal/SiC interfaces annealed at different temperatures was characterized using X-ray scattering techniques. The reverse characteristics of the devices were degraded with annealing temperatures. The maximum breakdown voltages of as-deposited devices and 850°C annealed devices are 1300 V and 626 V, respectively. However, the forward characteristics of the devices were found out to improve with annealing temperatures. X-ray scattering analysis showed that Pt-silicides were formed by annealing performed at or higher than 650°C. The formation of silicides was shown to increase the roughness of the Pt/SiC interface. It is believed that the forward characteristics of the SBDs be strongly dependent on the crystallity of silicides formed in the Pt/SiC interface during the annealing process.

AB - This paper reports on the relationship between the microstructure and the device performance of Pt/4H-SiC schottky barrier diodes (SBDs). The evolution of microstructure in the metal/SiC interfaces annealed at different temperatures was characterized using X-ray scattering techniques. The reverse characteristics of the devices were degraded with annealing temperatures. The maximum breakdown voltages of as-deposited devices and 850°C annealed devices are 1300 V and 626 V, respectively. However, the forward characteristics of the devices were found out to improve with annealing temperatures. X-ray scattering analysis showed that Pt-silicides were formed by annealing performed at or higher than 650°C. The formation of silicides was shown to increase the roughness of the Pt/SiC interface. It is believed that the forward characteristics of the SBDs be strongly dependent on the crystallity of silicides formed in the Pt/SiC interface during the annealing process.

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