Annealing effects of schottky contacts on the characteristics of 4H-SiC schottky barrier diodes

S. C. Kang, B. H. Kum, S. J. Do, J. H. Je, M. W. Shin

Research output: Contribution to journalConference articlepeer-review

4 Citations (Scopus)


This paper reports on the relationship between the microstructure and the device performance of Pt/4H-SiC schottky barrier diodes (SBDs). The evolution of microstructure in the metal/SiC interfaces annealed at different temperatures was characterized using X-ray scattering techniques. The reverse characteristics of the devices were degraded with annealing temperatures. The maximum breakdown voltages of as-deposited devices and 850°C annealed devices are 1300 V and 626 V, respectively. However, the forward characteristics of the devices were found out to improve with annealing temperatures. X-ray scattering analysis showed that Pt-silicides were formed by annealing performed at or higher than 650°C. The formation of silicides was shown to increase the roughness of the Pt/SiC interface. It is believed that the forward characteristics of the SBDs be strongly dependent on the crystallity of silicides formed in the Pt/SiC interface during the annealing process.

Original languageEnglish
Pages (from-to)141-146
Number of pages6
JournalMaterials Research Society Symposium - Proceedings
Publication statusPublished - 1999
EventProceedings of the 1999 MRS Spring Meeting - Symposium on 'Wide-Bandgap Semiconductors for High-Power, High Frequency and High-Temperature Applications' - San Francisco, CA, USA
Duration: 1999 Apr 51999 Apr 8

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials
  • Mechanical Engineering


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