Annealing effects on the properties of HfO2 films grown by metalorganic molecular beam epitaxy

Tae Hyoung Moon, Jae Woong Lee, Moon Ho Ham, Jae Min Myoung

Research output: Contribution to journalArticle

13 Citations (Scopus)

Abstract

We present the annealing effects on the properties of HfO2 dielectrics grown by metalorganic molecular beam epitaxy. From the comparison of the line shapes of core-level spectra for the N2-annealed samples with different annealing temperatures, the concentrations of SiO and Hf-silicate with high dielectric constant are found to be highest for HfO2 film annealed at 700 °C. Therefore, this result supports that the accumulation capacitance of the sample annealed at 700 °C in N2 ambient is not deteriorated in spite of the steep increase of interfacial layer thickness. For the O2-annealed samples, SiO2 with low dielectric constant is widely spread throughout the samples as the annealing temperature increases. Therefore, the accumulation capacitance density is degraded due to the increase in the thickness of the interfacial layer which mainly consists of SiO2.

Original languageEnglish
Pages (from-to)2452-2457
Number of pages6
JournalMicroelectronic Engineering
Volume83
Issue number11-12
DOIs
Publication statusPublished - 2006 Nov 1

Fingerprint

Molecular beam epitaxy
molecular beam epitaxy
Annealing
annealing
Permittivity
Capacitance
Silicates
Core levels
capacitance
permittivity
line shape
silicates
Temperature
temperature

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Moon, Tae Hyoung ; Lee, Jae Woong ; Ham, Moon Ho ; Myoung, Jae Min. / Annealing effects on the properties of HfO2 films grown by metalorganic molecular beam epitaxy. In: Microelectronic Engineering. 2006 ; Vol. 83, No. 11-12. pp. 2452-2457.
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Annealing effects on the properties of HfO2 films grown by metalorganic molecular beam epitaxy. / Moon, Tae Hyoung; Lee, Jae Woong; Ham, Moon Ho; Myoung, Jae Min.

In: Microelectronic Engineering, Vol. 83, No. 11-12, 01.11.2006, p. 2452-2457.

Research output: Contribution to journalArticle

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AU - Moon, Tae Hyoung

AU - Lee, Jae Woong

AU - Ham, Moon Ho

AU - Myoung, Jae Min

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AB - We present the annealing effects on the properties of HfO2 dielectrics grown by metalorganic molecular beam epitaxy. From the comparison of the line shapes of core-level spectra for the N2-annealed samples with different annealing temperatures, the concentrations of SiO and Hf-silicate with high dielectric constant are found to be highest for HfO2 film annealed at 700 °C. Therefore, this result supports that the accumulation capacitance of the sample annealed at 700 °C in N2 ambient is not deteriorated in spite of the steep increase of interfacial layer thickness. For the O2-annealed samples, SiO2 with low dielectric constant is widely spread throughout the samples as the annealing temperature increases. Therefore, the accumulation capacitance density is degraded due to the increase in the thickness of the interfacial layer which mainly consists of SiO2.

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