Annealing-induced conductivity transition in ZnO nanowires for field-effect devices

Pyo Jin Jeon; Young Tack Lee; Ryong Ha; Heon Jin Choi; Kwan Hyuck Yoon; Myung M. Sung; Seongil Im

doi:10.1063/1.4739520

Annealing-induced conductivity transition in ZnO nanowires for field-effect devices

Pyo Jin Jeon, Young Tack Lee, Ryong Ha, Heon Jin Choi, Kwan Hyuck Yoon, Myung M. Sung, Seongil Im

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We report on the fabrication of ZnO nanowire (NW) devices in which the NWs were annealed in air ambient for their conductivity change from conducting to semiconducting states. Ambient annealing at 600 °C effectively gained a good semiconducting state of ZnO NW. Either top- or bottom-gate NW field-effect transistors (FETs) with optimally annealed ZnO NW showed a high on/off current ratio of ∼10 ⁶, while the NW FETs with the initially conducting NWs appeared to keep on-state only. Schottky diode with the annealed NW displayed an ideality factor of ∼1.51 along with an on/off ratio of ∼10 ³.

Original language	English
Article number	043504
Journal	Applied Physics Letters
Volume	101
Issue number	4
DOIs	https://doi.org/10.1063/1.4739520
Publication status	Published - 2012 Jul 23

Bibliographical note

Funding Information:
The authors acknowledge the financial support from NRF (NRL program: Grant No. 2012-0000126), Brain Korea 21 Program. Pyo Jin Jeon would like to thank the LOTTE scholarship.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Access to Document

10.1063/1.4739520

Fingerprint Dive into the research topics of 'Annealing-induced conductivity transition in ZnO nanowires for field-effect devices'. Together they form a unique fingerprint.

Cite this

@article{492182e340d040e292c88a9df96de3ce,

title = "Annealing-induced conductivity transition in ZnO nanowires for field-effect devices",

abstract = "We report on the fabrication of ZnO nanowire (NW) devices in which the NWs were annealed in air ambient for their conductivity change from conducting to semiconducting states. Ambient annealing at 600 °C effectively gained a good semiconducting state of ZnO NW. Either top- or bottom-gate NW field-effect transistors (FETs) with optimally annealed ZnO NW showed a high on/off current ratio of ∼10 6, while the NW FETs with the initially conducting NWs appeared to keep on-state only. Schottky diode with the annealed NW displayed an ideality factor of ∼1.51 along with an on/off ratio of ∼10 3.",

author = "{Jin Jeon}, Pyo and {Tack Lee}, Young and Ryong Ha and Choi, {Heon Jin} and {Hyuck Yoon}, Kwan and Sung, {Myung M.} and Seongil Im",

note = "Funding Information: The authors acknowledge the financial support from NRF (NRL program: Grant No. 2012-0000126), Brain Korea 21 Program. Pyo Jin Jeon would like to thank the LOTTE scholarship. ",

year = "2012",

month = jul,

day = "23",

doi = "10.1063/1.4739520",

language = "English",

volume = "101",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "4",

}

TY - JOUR

T1 - Annealing-induced conductivity transition in ZnO nanowires for field-effect devices

AU - Jin Jeon, Pyo

AU - Tack Lee, Young

AU - Ha, Ryong

AU - Choi, Heon Jin

AU - Hyuck Yoon, Kwan

AU - Sung, Myung M.

AU - Im, Seongil

N1 - Funding Information: The authors acknowledge the financial support from NRF (NRL program: Grant No. 2012-0000126), Brain Korea 21 Program. Pyo Jin Jeon would like to thank the LOTTE scholarship.

PY - 2012/7/23

Y1 - 2012/7/23

N2 - We report on the fabrication of ZnO nanowire (NW) devices in which the NWs were annealed in air ambient for their conductivity change from conducting to semiconducting states. Ambient annealing at 600 °C effectively gained a good semiconducting state of ZnO NW. Either top- or bottom-gate NW field-effect transistors (FETs) with optimally annealed ZnO NW showed a high on/off current ratio of ∼10 6, while the NW FETs with the initially conducting NWs appeared to keep on-state only. Schottky diode with the annealed NW displayed an ideality factor of ∼1.51 along with an on/off ratio of ∼10 3.

AB - We report on the fabrication of ZnO nanowire (NW) devices in which the NWs were annealed in air ambient for their conductivity change from conducting to semiconducting states. Ambient annealing at 600 °C effectively gained a good semiconducting state of ZnO NW. Either top- or bottom-gate NW field-effect transistors (FETs) with optimally annealed ZnO NW showed a high on/off current ratio of ∼10 6, while the NW FETs with the initially conducting NWs appeared to keep on-state only. Schottky diode with the annealed NW displayed an ideality factor of ∼1.51 along with an on/off ratio of ∼10 3.

UR - http://www.scopus.com/inward/record.url?scp=84864429104&partnerID=8YFLogxK

UR - http://www.scopus.com/inward/citedby.url?scp=84864429104&partnerID=8YFLogxK

U2 - 10.1063/1.4739520

DO - 10.1063/1.4739520

M3 - Article

AN - SCOPUS:84864429104

VL - 101

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

IS - 4

M1 - 043504

ER -

Annealing-induced conductivity transition in ZnO nanowires for field-effect devices

Abstract

Bibliographical note

All Science Journal Classification (ASJC) codes

Access to Document

Other files and links

Cite this