Annealing-induced conductivity transition in ZnO nanowires for field-effect devices

Pyo Jin Jeon; Young Tack Lee; Ryong Ha; Heon Jin Choi; Kwan Hyuck Yoon; Myung M. Sung; Seongil Im

doi:10.1063/1.4739520

Annealing-induced conductivity transition in ZnO nanowires for field-effect devices

Pyo Jin Jeon, Young Tack Lee, Ryong Ha, Heon Jin Choi, Kwan Hyuck Yoon, Myung M. Sung, Seongil Im

Research output: Contribution to journal › Article

9 Citations (Scopus)

Abstract

We report on the fabrication of ZnO nanowire (NW) devices in which the NWs were annealed in air ambient for their conductivity change from conducting to semiconducting states. Ambient annealing at 600 °C effectively gained a good semiconducting state of ZnO NW. Either top- or bottom-gate NW field-effect transistors (FETs) with optimally annealed ZnO NW showed a high on/off current ratio of ∼10 ⁶, while the NW FETs with the initially conducting NWs appeared to keep on-state only. Schottky diode with the annealed NW displayed an ideality factor of ∼1.51 along with an on/off ratio of ∼10 ³.

Original language	English
Article number	043504
Journal	Applied Physics Letters
Volume	101
Issue number	4
DOIs	https://doi.org/10.1063/1.4739520
Publication status	Published - 2012 Jul 23

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All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

Cite this

Jin Jeon, P., Tack Lee, Y., Ha, R., Choi, H. J., Hyuck Yoon, K., Sung, M. M., & Im, S. (2012). Annealing-induced conductivity transition in ZnO nanowires for field-effect devices. Applied Physics Letters, 101(4), [043504]. https://doi.org/10.1063/1.4739520

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10.1063/1.4739520