Annealing-induced conductivity transition in ZnO nanowires for field-effect devices

Pyo Jin Jeon; Young Tack Lee; Ryong Ha; Heon Jin Choi; Kwan Hyuck Yoon; Myung M. Sung; Seongil Im

doi:10.1063/1.4739520

Annealing-induced conductivity transition in ZnO nanowires for field-effect devices

Pyo Jin Jeon, Young Tack Lee, Ryong Ha, Heon Jin Choi, Kwan Hyuck Yoon, Myung M. Sung, Seongil Im

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

We report on the fabrication of ZnO nanowire (NW) devices in which the NWs were annealed in air ambient for their conductivity change from conducting to semiconducting states. Ambient annealing at 600 °C effectively gained a good semiconducting state of ZnO NW. Either top- or bottom-gate NW field-effect transistors (FETs) with optimally annealed ZnO NW showed a high on/off current ratio of ∼10 ⁶, while the NW FETs with the initially conducting NWs appeared to keep on-state only. Schottky diode with the annealed NW displayed an ideality factor of ∼1.51 along with an on/off ratio of ∼10 ³.

Original language	English
Article number	043504
Journal	Applied Physics Letters
Volume	101
Issue number	4
DOIs	https://doi.org/10.1063/1.4739520
Publication status	Published - 2012 Jul 23

Bibliographical note

Funding Information:
The authors acknowledge the financial support from NRF (NRL program: Grant No. 2012-0000126), Brain Korea 21 Program. Pyo Jin Jeon would like to thank the LOTTE scholarship.

All Science Journal Classification (ASJC) codes

Physics and Astronomy (miscellaneous)

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10.1063/1.4739520

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title = "Annealing-induced conductivity transition in ZnO nanowires for field-effect devices",

abstract = "We report on the fabrication of ZnO nanowire (NW) devices in which the NWs were annealed in air ambient for their conductivity change from conducting to semiconducting states. Ambient annealing at 600 °C effectively gained a good semiconducting state of ZnO NW. Either top- or bottom-gate NW field-effect transistors (FETs) with optimally annealed ZnO NW showed a high on/off current ratio of ∼10 6, while the NW FETs with the initially conducting NWs appeared to keep on-state only. Schottky diode with the annealed NW displayed an ideality factor of ∼1.51 along with an on/off ratio of ∼10 3.",

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AU - Jin Jeon, Pyo

AU - Tack Lee, Young

AU - Ha, Ryong

AU - Choi, Heon Jin

AU - Hyuck Yoon, Kwan

AU - Sung, Myung M.

AU - Im, Seongil

N1 - Funding Information: The authors acknowledge the financial support from NRF (NRL program: Grant No. 2012-0000126), Brain Korea 21 Program. Pyo Jin Jeon would like to thank the LOTTE scholarship.

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N2 - We report on the fabrication of ZnO nanowire (NW) devices in which the NWs were annealed in air ambient for their conductivity change from conducting to semiconducting states. Ambient annealing at 600 °C effectively gained a good semiconducting state of ZnO NW. Either top- or bottom-gate NW field-effect transistors (FETs) with optimally annealed ZnO NW showed a high on/off current ratio of ∼10 6, while the NW FETs with the initially conducting NWs appeared to keep on-state only. Schottky diode with the annealed NW displayed an ideality factor of ∼1.51 along with an on/off ratio of ∼10 3.

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Annealing-induced conductivity transition in ZnO nanowires for field-effect devices

Abstract

Bibliographical note

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