Annealing-induced conductivity transition in ZnO nanowires for field-effect devices

Pyo Jin Jeon, Young Tack Lee, Ryong Ha, Heon Jin Choi, Kwan Hyuck Yoon, Myung M. Sung, Seongil Im

Research output: Contribution to journalArticle

9 Citations (Scopus)

Abstract

We report on the fabrication of ZnO nanowire (NW) devices in which the NWs were annealed in air ambient for their conductivity change from conducting to semiconducting states. Ambient annealing at 600 °C effectively gained a good semiconducting state of ZnO NW. Either top- or bottom-gate NW field-effect transistors (FETs) with optimally annealed ZnO NW showed a high on/off current ratio of ∼10 6, while the NW FETs with the initially conducting NWs appeared to keep on-state only. Schottky diode with the annealed NW displayed an ideality factor of ∼1.51 along with an on/off ratio of ∼10 3.

Original languageEnglish
Article number043504
JournalApplied Physics Letters
Volume101
Issue number4
DOIs
Publication statusPublished - 2012 Jul 23

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this