We report on the fabrication of ZnO nanowire (NW) devices in which the NWs were annealed in air ambient for their conductivity change from conducting to semiconducting states. Ambient annealing at 600 °C effectively gained a good semiconducting state of ZnO NW. Either top- or bottom-gate NW field-effect transistors (FETs) with optimally annealed ZnO NW showed a high on/off current ratio of ∼10 6, while the NW FETs with the initially conducting NWs appeared to keep on-state only. Schottky diode with the annealed NW displayed an ideality factor of ∼1.51 along with an on/off ratio of ∼10 3.
Bibliographical noteFunding Information:
The authors acknowledge the financial support from NRF (NRL program: Grant No. 2012-0000126), Brain Korea 21 Program. Pyo Jin Jeon would like to thank the LOTTE scholarship.
All Science Journal Classification (ASJC) codes
- Physics and Astronomy (miscellaneous)