Anodic imprint lithography patterns the GaAs substrate electrochemically by applying a voltage through a predefined anodic stamp. This newly devised technique performs anodic etching in a stamping manner. Stamps that serve as anodic electrodes are fabricated precisely, and the patterns can be imprinted continuously on GaAs substrates. The anodic current locally oxidizes the GaAs through the metal attached to the stamp, and the GaAs oxides are subsequently removed by an acid in the solution. The process is simplified because the metal catalyst is not left on the substrate and the use of an oxidizing agent is not required. Anodic imprint lithography integrates the lithography and etching steps without the use of a polymer resist. Predefined anodic stamps with fin, pillar, and mesh arrays clearly imprinted trenches, holes, and embossed disk arrays on the GaAs substrates, respectively. Anodic imprints replace photons and electrons in conventional lithography with electrochemical stamping, which can simplify existing techniques that are highly complex for extreme nanopatterning.
Bibliographical noteFunding Information:
This research was supported by MSIT (Ministry of Science and ICT), Korea, under the “ICT Consilience Creative Program” (IITP-2019-2017-0-01015) supervised by the IITP (Institute for Information & Communications Technology Promotion). This research was also supported by the Basic Science Research Program through the National Research Foundation of Korea (NRF) funded by the Ministry of Education, Science, and Technology (NRF-2016R1D1A1A09918647). This research was also supported by Korea Electric Power Corporation. (Grant No. R19XO01-22).
© 2019 American Chemical Society.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Physics and Astronomy(all)