Anomalous real space charge transfer through thick barriers in GaAs/AlxGa1-xAs asymmetric double quantum wells: AlxGa1-xAs as a percolating barrier

D. S. Kim; H. S. Ko; Y. M. Kim; S. J. Rhee; S. C. Hong; Y. H. Yee; W. S. Kim; J. C. Woo; H. J. Choi; J. Ihm; D. H. Woo; K. N. Kang

doi:10.1016/0038-1098(96)00406-1

Anomalous real space charge transfer through thick barriers in GaAs/Al_xGa_1-xAs asymmetric double quantum wells: Al_xGa_1-xAs as a percolating barrier

D. S. Kim, H. S. Ko, Y. M. Kim, S. J. Rhee, S. C. Hong, Y. H. Yee, W. S. Kim, J. C. Woo, H. J. Choi, J. Ihm, D. H. Woo, K. N. Kang

Department of Physics

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

Anomalously large real space charge transfer through thick barriers in GaAs asymmetric double quantum wells is studied. This inter-well excitonic transfer is very large when the barrier is the Al_0.3Ga_0.7As alloy, but disappears when the barrier is an equivalent GaAs/AlAs digital alloy. These results combined with observed x and barrier thickness dependence suggest that the inhomogeneities in the barrier may be responsible for this transfer. This picture is supported by the quantum mechanical calculation in three dimensions.

Original language	English
Pages (from-to)	231-235
Number of pages	5
Journal	Solid State Communications
Volume	100
Issue number	4
DOIs	https://doi.org/10.1016/0038-1098(96)00406-1
Publication status	Published - 1996 Oct

Bibliographical note

Funding Information:
Anomalously large real space charge transfer through thick barriers in GaAs asymmetric double quantum wells is studied. This inter-well excitonic transfer is very large when the barrier is the Alu.sGao.&s alloy, but disappears when the barrier is an equivalent GaAs/AlAs digital alloy. These results combined with observed x and barrier thickness dependence suggest that the inhomogeneities in the barrier may be responsible for this transfer. This picture is supported by the quantum mechanical calculation in three dimensions. Copyright 0 1996 Published by Elsevier Science Ltd

All Science Journal Classification (ASJC) codes

Chemistry(all)
Condensed Matter Physics
Materials Chemistry

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Kim, D. S., Ko, H. S., Kim, Y. M., Rhee, S. J., Hong, S. C., Yee, Y. H., Kim, W. S., Woo, J. C., Choi, H. J., Ihm, J., Woo, D. H., & Kang, K. N. (1996). Anomalous real space charge transfer through thick barriers in GaAs/Al_xGa_1-xAs asymmetric double quantum wells: Al_xGa_1-xAs as a percolating barrier. Solid State Communications, 100(4), 231-235. https://doi.org/10.1016/0038-1098(96)00406-1

Kim, D. S. ; Ko, H. S. ; Kim, Y. M. ; Rhee, S. J. ; Hong, S. C. ; Yee, Y. H. ; Kim, W. S. ; Woo, J. C. ; Choi, H. J. ; Ihm, J. ; Woo, D. H. ; Kang, K. N. / Anomalous real space charge transfer through thick barriers in GaAs/Al_xGa_1-xAs asymmetric double quantum wells : Al_xGa_1-xAs as a percolating barrier. In: Solid State Communications. 1996 ; Vol. 100, No. 4. pp. 231-235.

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title = "Anomalous real space charge transfer through thick barriers in GaAs/AlxGa1-xAs asymmetric double quantum wells: AlxGa1-xAs as a percolating barrier",

abstract = "Anomalously large real space charge transfer through thick barriers in GaAs asymmetric double quantum wells is studied. This inter-well excitonic transfer is very large when the barrier is the Al0.3Ga0.7As alloy, but disappears when the barrier is an equivalent GaAs/AlAs digital alloy. These results combined with observed x and barrier thickness dependence suggest that the inhomogeneities in the barrier may be responsible for this transfer. This picture is supported by the quantum mechanical calculation in three dimensions.",

author = "Kim, {D. S.} and Ko, {H. S.} and Kim, {Y. M.} and Rhee, {S. J.} and Hong, {S. C.} and Yee, {Y. H.} and Kim, {W. S.} and Woo, {J. C.} and Choi, {H. J.} and J. Ihm and Woo, {D. H.} and Kang, {K. N.}",

note = "Funding Information: Anomalously large real space charge transfer through thick barriers in GaAs asymmetric double quantum wells is studied. This inter-well excitonic transfer is very large when the barrier is the Alu.sGao.&s alloy, but disappears when the barrier is an equivalent GaAs/AlAs digital alloy. These results combined with observed x and barrier thickness dependence suggest that the inhomogeneities in the barrier may be responsible for this transfer. This picture is supported by the quantum mechanical calculation in three dimensions. Copyright 0 1996 Published by Elsevier Science Ltd",

year = "1996",

month = oct,

doi = "10.1016/0038-1098(96)00406-1",

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volume = "100",

pages = "231--235",

journal = "Solid State Communications",

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Anomalous real space charge transfer through thick barriers in GaAs/Al_xGa_1-xAs asymmetric double quantum wells : Al_xGa_1-xAs as a percolating barrier. / Kim, D. S.; Ko, H. S.; Kim, Y. M.; Rhee, S. J.; Hong, S. C.; Yee, Y. H.; Kim, W. S.; Woo, J. C.; Choi, H. J.; Ihm, J.; Woo, D. H.; Kang, K. N.

In: Solid State Communications, Vol. 100, No. 4, 10.1996, p. 231-235.

Research output: Contribution to journal › Article › peer-review

TY - JOUR

T1 - Anomalous real space charge transfer through thick barriers in GaAs/AlxGa1-xAs asymmetric double quantum wells

T2 - AlxGa1-xAs as a percolating barrier

AU - Kim, D. S.

AU - Ko, H. S.

AU - Kim, Y. M.

AU - Rhee, S. J.

AU - Hong, S. C.

AU - Yee, Y. H.

AU - Kim, W. S.

AU - Woo, J. C.

AU - Choi, H. J.

AU - Ihm, J.

AU - Woo, D. H.

AU - Kang, K. N.

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PY - 1996/10

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N2 - Anomalously large real space charge transfer through thick barriers in GaAs asymmetric double quantum wells is studied. This inter-well excitonic transfer is very large when the barrier is the Al0.3Ga0.7As alloy, but disappears when the barrier is an equivalent GaAs/AlAs digital alloy. These results combined with observed x and barrier thickness dependence suggest that the inhomogeneities in the barrier may be responsible for this transfer. This picture is supported by the quantum mechanical calculation in three dimensions.

AB - Anomalously large real space charge transfer through thick barriers in GaAs asymmetric double quantum wells is studied. This inter-well excitonic transfer is very large when the barrier is the Al0.3Ga0.7As alloy, but disappears when the barrier is an equivalent GaAs/AlAs digital alloy. These results combined with observed x and barrier thickness dependence suggest that the inhomogeneities in the barrier may be responsible for this transfer. This picture is supported by the quantum mechanical calculation in three dimensions.

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