Anomalous real space charge transfer through thick barriers in GaAs/Al x Ga 1-x As asymmetric double quantum wells: Al x Ga 1-x As as a percolating barrier

D. S. Kim, H. S. Ko, Y. M. Kim, S. J. Rhee, S. C. Hong, Y. H. Yee, W. S. Kim, J. C. Woo, Hyoung Joon Choi, J. Ihm, D. H. Woo, K. N. Kang

Research output: Contribution to journalArticle

2 Citations (Scopus)

Abstract

Anomalously large real space charge transfer through thick barriers in GaAs asymmetric double quantum wells is studied. This inter-well excitonic transfer is very large when the barrier is the Al 0.3 Ga 0.7 As alloy, but disappears when the barrier is an equivalent GaAs/AlAs digital alloy. These results combined with observed x and barrier thickness dependence suggest that the inhomogeneities in the barrier may be responsible for this transfer. This picture is supported by the quantum mechanical calculation in three dimensions.

Original languageEnglish
Pages (from-to)231-235
Number of pages5
JournalSolid State Communications
Volume100
Issue number4
DOIs
Publication statusPublished - 1996 Jan 1

Fingerprint

Electric space charge
Semiconductor quantum wells
Charge transfer
space charge
charge transfer
quantum wells
inhomogeneity
gallium arsenide

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Condensed Matter Physics
  • Materials Chemistry

Cite this

Kim, D. S. ; Ko, H. S. ; Kim, Y. M. ; Rhee, S. J. ; Hong, S. C. ; Yee, Y. H. ; Kim, W. S. ; Woo, J. C. ; Choi, Hyoung Joon ; Ihm, J. ; Woo, D. H. ; Kang, K. N. / Anomalous real space charge transfer through thick barriers in GaAs/Al x Ga 1-x As asymmetric double quantum wells : Al x Ga 1-x As as a percolating barrier. In: Solid State Communications. 1996 ; Vol. 100, No. 4. pp. 231-235.
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abstract = "Anomalously large real space charge transfer through thick barriers in GaAs asymmetric double quantum wells is studied. This inter-well excitonic transfer is very large when the barrier is the Al 0.3 Ga 0.7 As alloy, but disappears when the barrier is an equivalent GaAs/AlAs digital alloy. These results combined with observed x and barrier thickness dependence suggest that the inhomogeneities in the barrier may be responsible for this transfer. This picture is supported by the quantum mechanical calculation in three dimensions.",
author = "Kim, {D. S.} and Ko, {H. S.} and Kim, {Y. M.} and Rhee, {S. J.} and Hong, {S. C.} and Yee, {Y. H.} and Kim, {W. S.} and Woo, {J. C.} and Choi, {Hyoung Joon} and J. Ihm and Woo, {D. H.} and Kang, {K. N.}",
year = "1996",
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Anomalous real space charge transfer through thick barriers in GaAs/Al x Ga 1-x As asymmetric double quantum wells : Al x Ga 1-x As as a percolating barrier. / Kim, D. S.; Ko, H. S.; Kim, Y. M.; Rhee, S. J.; Hong, S. C.; Yee, Y. H.; Kim, W. S.; Woo, J. C.; Choi, Hyoung Joon; Ihm, J.; Woo, D. H.; Kang, K. N.

In: Solid State Communications, Vol. 100, No. 4, 01.01.1996, p. 231-235.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Anomalous real space charge transfer through thick barriers in GaAs/Al x Ga 1-x As asymmetric double quantum wells

T2 - Al x Ga 1-x As as a percolating barrier

AU - Kim, D. S.

AU - Ko, H. S.

AU - Kim, Y. M.

AU - Rhee, S. J.

AU - Hong, S. C.

AU - Yee, Y. H.

AU - Kim, W. S.

AU - Woo, J. C.

AU - Choi, Hyoung Joon

AU - Ihm, J.

AU - Woo, D. H.

AU - Kang, K. N.

PY - 1996/1/1

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N2 - Anomalously large real space charge transfer through thick barriers in GaAs asymmetric double quantum wells is studied. This inter-well excitonic transfer is very large when the barrier is the Al 0.3 Ga 0.7 As alloy, but disappears when the barrier is an equivalent GaAs/AlAs digital alloy. These results combined with observed x and barrier thickness dependence suggest that the inhomogeneities in the barrier may be responsible for this transfer. This picture is supported by the quantum mechanical calculation in three dimensions.

AB - Anomalously large real space charge transfer through thick barriers in GaAs asymmetric double quantum wells is studied. This inter-well excitonic transfer is very large when the barrier is the Al 0.3 Ga 0.7 As alloy, but disappears when the barrier is an equivalent GaAs/AlAs digital alloy. These results combined with observed x and barrier thickness dependence suggest that the inhomogeneities in the barrier may be responsible for this transfer. This picture is supported by the quantum mechanical calculation in three dimensions.

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