Antiferromagnet-Based Spintronic Functionality by Controlling Isospin Domains in a Layered Perovskite Iridate

Nara Lee, Eunjung Ko, Hwan Young Choi, Yun Jeong Hong, Muhammad Nauman, Woun Kang, Hyoung Joon Choi, Young Jai Choi, Younjung Jo

Research output: Contribution to journalArticle

6 Citations (Scopus)

Abstract

The novel electronic state of the canted antiferromagnetic (AFM) insulator strontium iridate (Sr2IrO4) is well described by the spin–orbit-entangled isospin Jeff = 1/2, but the role of isospin in transport phenomena remains poorly understood. In this study, antiferromagnet-based spintronic functionality is demonstrated by combining the unique characteristics of the isospin state in Sr2IrO4. Based on magnetic and transport measurements, a large and highly anisotropic magnetoresistance (AMR) is obtained by manipulating the AFM isospin domains. First-principles calculations suggest that electrons whose isospin directions are strongly coupled to the in-plane net magnetic moment encounter an isospin mismatch when moving across the AFM domain boundaries, which generates a high resistance state. By rotating a magnetic field that aligns in-plane net moments and removes domain boundaries, the macroscopically ordered isospins govern dynamic transport through the system, which leads to the extremely angle-sensitive AMR. As this work establishes a link between isospins and magnetotransport in strongly spin–orbit-coupled AFM Sr2IrO4, the peculiar AMR effect provides a beneficial foundation for fundamental and applied research on AFM spintronics.

Original languageEnglish
Article number1805564
JournalAdvanced Materials
Volume30
Issue number52
DOIs
Publication statusPublished - 2018 Dec 27

All Science Journal Classification (ASJC) codes

  • Materials Science(all)
  • Mechanics of Materials
  • Mechanical Engineering

Fingerprint Dive into the research topics of 'Antiferromagnet-Based Spintronic Functionality by Controlling Isospin Domains in a Layered Perovskite Iridate'. Together they form a unique fingerprint.

  • Cite this