In this chapter, we introduce metal ferroelectric insulator semiconductor ferroelectric field effect transistor (MFIS FeFET) which is representative research field in device application among the applications of spontaneous polarization of ferroelectric. However, the research flinched from several difficult problems with advanced flash memory and competition with magnetoresistive random access memory (MRAM), phase change random access memory (PRAM), and resistive random access memory (ReRAM) recently. Nevertheless, the research is studied still now due to the unique structure, record in only one transistor and strong application. Our research team describes this chapter as below formation based on our research results.
|Title of host publication||Ferroelectrics|
|Subtitle of host publication||New Research|
|Publisher||Nova Science Publishers, Inc.|
|Number of pages||108|
|Publication status||Published - 2012 Dec 1|
All Science Journal Classification (ASJC) codes