Application of ferroelectrics: Metal ferroelectric insulator semiconductor field effect transistor

Hyung-Ho Park, Hong Sub Lee

Research output: Chapter in Book/Report/Conference proceedingChapter

Abstract

In this chapter, we introduce metal ferroelectric insulator semiconductor ferroelectric field effect transistor (MFIS FeFET) which is representative research field in device application among the applications of spontaneous polarization of ferroelectric. However, the research flinched from several difficult problems with advanced flash memory and competition with magnetoresistive random access memory (MRAM), phase change random access memory (PRAM), and resistive random access memory (ReRAM) recently. Nevertheless, the research is studied still now due to the unique structure, record in only one transistor and strong application. Our research team describes this chapter as below formation based on our research results.

Original languageEnglish
Title of host publicationFerroelectrics
Subtitle of host publicationNew Research
PublisherNova Science Publishers, Inc.
Pages1-108
Number of pages108
ISBN (Print)9781619422827
Publication statusPublished - 2012 Dec 1

All Science Journal Classification (ASJC) codes

  • Engineering(all)

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  • Cite this

    Park, H-H., & Lee, H. S. (2012). Application of ferroelectrics: Metal ferroelectric insulator semiconductor field effect transistor. In Ferroelectrics: New Research (pp. 1-108). Nova Science Publishers, Inc..