Application of high work function anode for organic light emitting diode

Ji Yun Chun, Jin Woo Han, Dae Shik Seo

Research output: Contribution to journalArticle

3 Citations (Scopus)

Abstract

We fabricated bottom emission organic light emitting diode (OLED) by using high work function material anode with sputtering method and investigated their electrical properties. Nickel oxide (NiO) was found to reach about 5.2eV, much higher than those of other oxide metal and indium tin oxide (ITO). The bottom emission OLED using a thin oxidation of nickel oxide layer upon ITO as an anode and an Al layer as a cathode has been fabricated. Device performance was found to improve greatly due to an efficient hole injection from nickel oxide; moreover, the transmittance of NiO-ITO was nearly same as the transmittance of ITO.

Original languageEnglish
Pages (from-to)115-121
Number of pages7
JournalMolecular Crystals and Liquid Crystals
Volume514
DOIs
Publication statusPublished - 2009 Dec 1

Fingerprint

Nickel oxide
nickel oxides
Organic light emitting diodes (OLED)
Tin oxides
indium oxides
Indium
tin oxides
Anodes
anodes
light emitting diodes
transmittance
Oxides
Sputtering
metal oxides
Electric properties
Cathodes
cathodes
sputtering
Metals
electrical properties

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics

Cite this

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Application of high work function anode for organic light emitting diode. / Chun, Ji Yun; Han, Jin Woo; Seo, Dae Shik.

In: Molecular Crystals and Liquid Crystals, Vol. 514, 01.12.2009, p. 115-121.

Research output: Contribution to journalArticle

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