Application of low temperature GaAs to GaAs/Si

Hiroshi Fujioka, Hyunchul Sohn, Eicke R. Weber, Ashish Verma

Research output: Contribution to journalArticle

4 Citations (Scopus)

Abstract

Low Temperature grown GaAs (LT-GaAs) was incorporated as a buffer layer for GaAs on Si (GaAs/Si) and striking advantages of this structure were confirmed. The LT-GaAs layer showed high resistivity of 1.7 × 107 ω-cm even on a highly defective GaAs/Si. GaAs/Si with the LT-GaAs buffer layers had smoother surfaces and showed much higher photoluminescence intensities than those without LT-GaAs. Schottky diodes fabricated on GaAs/Si with LT-GaAs showed a drastically reduced leakage current and an improved ideality factor. These results indicate that the LT-GaAs buffer layer is promising for future integrated circuits which utilize GaAs/Si substrates.

Original languageEnglish
Pages (from-to)1511-1514
Number of pages4
JournalJournal of Electronic Materials
Volume22
Issue number12
DOIs
Publication statusPublished - 1993 Dec 1

Fingerprint

Buffer layers
buffers
Temperature
Schottky diodes
Leakage currents
integrated circuits
Integrated circuits
gallium arsenide
Photoluminescence
Diodes
leakage
photoluminescence
electrical resistivity
Substrates

All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Materials Chemistry
  • Electrical and Electronic Engineering

Cite this

Fujioka, Hiroshi ; Sohn, Hyunchul ; Weber, Eicke R. ; Verma, Ashish. / Application of low temperature GaAs to GaAs/Si. In: Journal of Electronic Materials. 1993 ; Vol. 22, No. 12. pp. 1511-1514.
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Application of low temperature GaAs to GaAs/Si. / Fujioka, Hiroshi; Sohn, Hyunchul; Weber, Eicke R.; Verma, Ashish.

In: Journal of Electronic Materials, Vol. 22, No. 12, 01.12.1993, p. 1511-1514.

Research output: Contribution to journalArticle

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