Abstract
Low Temperature grown GaAs (LT-GaAs) was incorporated as a buffer layer for GaAs on Si (GaAs/Si) and striking advantages of this structure were confirmed. The LT-GaAs layer showed high resistivity of 1.7 × 107 ω-cm even on a highly defective GaAs/Si. GaAs/Si with the LT-GaAs buffer layers had smoother surfaces and showed much higher photoluminescence intensities than those without LT-GaAs. Schottky diodes fabricated on GaAs/Si with LT-GaAs showed a drastically reduced leakage current and an improved ideality factor. These results indicate that the LT-GaAs buffer layer is promising for future integrated circuits which utilize GaAs/Si substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 1511-1514 |
| Number of pages | 4 |
| Journal | Journal of Electronic Materials |
| Volume | 22 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1993 Dec 1 |
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All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Materials Chemistry
- Electrical and Electronic Engineering
Cite this
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Application of low temperature GaAs to GaAs/Si. / Fujioka, Hiroshi; Sohn, Hyunchul; Weber, Eicke R.; Verma, Ashish.
In: Journal of Electronic Materials, Vol. 22, No. 12, 01.12.1993, p. 1511-1514.Research output: Contribution to journal › Article
TY - JOUR
T1 - Application of low temperature GaAs to GaAs/Si
AU - Fujioka, Hiroshi
AU - Sohn, Hyunchul
AU - Weber, Eicke R.
AU - Verma, Ashish
PY - 1993/12/1
Y1 - 1993/12/1
N2 - Low Temperature grown GaAs (LT-GaAs) was incorporated as a buffer layer for GaAs on Si (GaAs/Si) and striking advantages of this structure were confirmed. The LT-GaAs layer showed high resistivity of 1.7 × 107 ω-cm even on a highly defective GaAs/Si. GaAs/Si with the LT-GaAs buffer layers had smoother surfaces and showed much higher photoluminescence intensities than those without LT-GaAs. Schottky diodes fabricated on GaAs/Si with LT-GaAs showed a drastically reduced leakage current and an improved ideality factor. These results indicate that the LT-GaAs buffer layer is promising for future integrated circuits which utilize GaAs/Si substrates.
AB - Low Temperature grown GaAs (LT-GaAs) was incorporated as a buffer layer for GaAs on Si (GaAs/Si) and striking advantages of this structure were confirmed. The LT-GaAs layer showed high resistivity of 1.7 × 107 ω-cm even on a highly defective GaAs/Si. GaAs/Si with the LT-GaAs buffer layers had smoother surfaces and showed much higher photoluminescence intensities than those without LT-GaAs. Schottky diodes fabricated on GaAs/Si with LT-GaAs showed a drastically reduced leakage current and an improved ideality factor. These results indicate that the LT-GaAs buffer layer is promising for future integrated circuits which utilize GaAs/Si substrates.
UR - http://www.scopus.com/inward/record.url?scp=0027808861&partnerID=8YFLogxK
UR - http://www.scopus.com/inward/citedby.url?scp=0027808861&partnerID=8YFLogxK
U2 - 10.1007/BF02650010
DO - 10.1007/BF02650010
M3 - Article
VL - 22
SP - 1511
EP - 1514
JO - Journal of Electronic Materials
JF - Journal of Electronic Materials
SN - 0361-5235
IS - 12
ER -