Abstract
Low Temperature grown GaAs (LT-GaAs) was incorporated as a buffer layer for GaAs on Si (GaAs/Si) and striking advantages of this structure were confirmed. The LT-GaAs layer showed high resistivity of 1.7 × 107 ω-cm even on a highly defective GaAs/Si. GaAs/Si with the LT-GaAs buffer layers had smoother surfaces and showed much higher photoluminescence intensities than those without LT-GaAs. Schottky diodes fabricated on GaAs/Si with LT-GaAs showed a drastically reduced leakage current and an improved ideality factor. These results indicate that the LT-GaAs buffer layer is promising for future integrated circuits which utilize GaAs/Si substrates.
| Original language | English |
|---|---|
| Pages (from-to) | 1511-1514 |
| Number of pages | 4 |
| Journal | Journal of Electronic Materials |
| Volume | 22 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1993 Dec |
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry
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Fujioka, H., Sohn, H., Weber, E. R., & Verma, A. (1993). Application of low temperature GaAs to GaAs/Si. Journal of Electronic Materials, 22(12), 1511-1514. https://doi.org/10.1007/BF02650010