Low Temperature grown GaAs (LT-GaAs) was incorporated as a buffer layer for GaAs on Si (GaAs/Si) and striking advantages of this structure were confirmed. The LT-GaAs layer showed high resistivity of 1.7 × 107 ω-cm even on a highly defective GaAs/Si. GaAs/Si with the LT-GaAs buffer layers had smoother surfaces and showed much higher photoluminescence intensities than those without LT-GaAs. Schottky diodes fabricated on GaAs/Si with LT-GaAs showed a drastically reduced leakage current and an improved ideality factor. These results indicate that the LT-GaAs buffer layer is promising for future integrated circuits which utilize GaAs/Si substrates.
All Science Journal Classification (ASJC) codes
- Electronic, Optical and Magnetic Materials
- Condensed Matter Physics
- Electrical and Electronic Engineering
- Materials Chemistry