Application of low temperature GaAs to GaAs/Si

Hiroshi Fujioka, Hyunchul Sohn, Eicke R. Weber, Ashish Verma

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4 Citations (Scopus)

Abstract

Low Temperature grown GaAs (LT-GaAs) was incorporated as a buffer layer for GaAs on Si (GaAs/Si) and striking advantages of this structure were confirmed. The LT-GaAs layer showed high resistivity of 1.7 × 107 ω-cm even on a highly defective GaAs/Si. GaAs/Si with the LT-GaAs buffer layers had smoother surfaces and showed much higher photoluminescence intensities than those without LT-GaAs. Schottky diodes fabricated on GaAs/Si with LT-GaAs showed a drastically reduced leakage current and an improved ideality factor. These results indicate that the LT-GaAs buffer layer is promising for future integrated circuits which utilize GaAs/Si substrates.

Original languageEnglish
Pages (from-to)1511-1514
Number of pages4
JournalJournal of Electronic Materials
Volume22
Issue number12
DOIs
Publication statusPublished - 1993 Dec 1

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All Science Journal Classification (ASJC) codes

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Electrical and Electronic Engineering
  • Materials Chemistry

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