Application of nonalloyed PdGe ohmic contact to self-aligned gate AIGaAs/InGaAs pseudomorphic high-electron-mobility transistor

Jungwoo Oh, Jong Lam Lee

Research output: Contribution to journalArticle

1 Citation (Scopus)

Abstract

A self-aligned gate pseudomorphic high-electron-mobility transistor (PHEMT) was developed through nonalloyed PdGe ohmic contact on an n+-GaAs cap layer. The lowest contact resistivity obtained was 1.2×10-7 Ω cm2 at 300°C. This allows us to change the sequence on the formation of source/drain and gate electrodes in the process of PHEMT fabrication, namely self-aligned gate PHEMT. Performance of the self-aligned gate PHEMT was remarkably pronounced with annealing temperature or the decrease of contact resistivity. This is due to the solid-phase regrowth of highly Ge-doped GaAs below the PdGe contact, which acts to reduce barrier height for electron tunneling.

Original languageEnglish
Pages (from-to)2866-2868
Number of pages3
JournalApplied Physics Letters
Volume74
Issue number19
DOIs
Publication statusPublished - 1999 May 10

    Fingerprint

All Science Journal Classification (ASJC) codes

  • Physics and Astronomy (miscellaneous)

Cite this