This article presents an application of ordered mesoporous films to phase-change memory (PCM). Though ordered mesoporous SiO 2 films have attracted attention due to their regular arrangement of nanometer-sized pores, they have not yet become an integral component in any application and have not been produced in a practical manner. Also, even though PCMs are potential next-generation memory devices, they have not made large market due to high power consumption, heat interference, and other shortcomings. In this work, ordered mesoporous SiO 2 films were applied to an interlayer dielectric in PCM as a thermal insulating layer, resulting in one-quarter lower power consumption in PCM devices through the reduction of the power consumed in the RESET operation.
Bibliographical noteFunding Information:
This study was supported by a Grant from the Fundamental R&D Program (Grant No. K0004114) for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea . Experiments at PLS were supported in part by MEST and POSTECH.
All Science Journal Classification (ASJC) codes
- Materials Science(all)
- Condensed Matter Physics
- Mechanics of Materials