Application of ordered mesoporous SiO 2 film for low power consumption in phase-change memory

Tae Jung Ha, Hyung Keun Kim, Doo Jin Choi, Sangwoo Shin, Hyung Hee Cho, Ho Won Jang, Seok Jin Yoon, Hyung-Ho Park

Research output: Contribution to journalArticle

7 Citations (Scopus)

Abstract

This article presents an application of ordered mesoporous films to phase-change memory (PCM). Though ordered mesoporous SiO 2 films have attracted attention due to their regular arrangement of nanometer-sized pores, they have not yet become an integral component in any application and have not been produced in a practical manner. Also, even though PCMs are potential next-generation memory devices, they have not made large market due to high power consumption, heat interference, and other shortcomings. In this work, ordered mesoporous SiO 2 films were applied to an interlayer dielectric in PCM as a thermal insulating layer, resulting in one-quarter lower power consumption in PCM devices through the reduction of the power consumed in the RESET operation.

Original languageEnglish
Pages (from-to)321-325
Number of pages5
JournalMicroporous and Mesoporous Materials
Volume163
DOIs
Publication statusPublished - 2012 Nov 15

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Phase change memory
Electric power utilization
Data storage equipment
Pulse code modulation
interlayers
porosity
interference
heat
Hot Temperature

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials

Cite this

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abstract = "This article presents an application of ordered mesoporous films to phase-change memory (PCM). Though ordered mesoporous SiO 2 films have attracted attention due to their regular arrangement of nanometer-sized pores, they have not yet become an integral component in any application and have not been produced in a practical manner. Also, even though PCMs are potential next-generation memory devices, they have not made large market due to high power consumption, heat interference, and other shortcomings. In this work, ordered mesoporous SiO 2 films were applied to an interlayer dielectric in PCM as a thermal insulating layer, resulting in one-quarter lower power consumption in PCM devices through the reduction of the power consumed in the RESET operation.",
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Application of ordered mesoporous SiO 2 film for low power consumption in phase-change memory. / Ha, Tae Jung; Kim, Hyung Keun; Choi, Doo Jin; Shin, Sangwoo; Cho, Hyung Hee; Jang, Ho Won; Yoon, Seok Jin; Park, Hyung-Ho.

In: Microporous and Mesoporous Materials, Vol. 163, 15.11.2012, p. 321-325.

Research output: Contribution to journalArticle

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