Application of ordered mesoporous SiO 2 film for low power consumption in phase-change memory

Tae Jung Ha; Hyung Keun Kim; Doo Jin Choi; Sangwoo Shin; Hyung Hee Cho; Ho Won Jang; Seok Jin Yoon; Hyung Ho Park

doi:10.1016/j.micromeso.2012.07.039

Application of ordered mesoporous SiO ₂ film for low power consumption in phase-change memory

Tae Jung Ha, Hyung Keun Kim, Doo Jin Choi, Sangwoo Shin, Hyung Hee Cho, Ho Won Jang, Seok Jin Yoon, Hyung Ho Park

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

This article presents an application of ordered mesoporous films to phase-change memory (PCM). Though ordered mesoporous SiO ₂ films have attracted attention due to their regular arrangement of nanometer-sized pores, they have not yet become an integral component in any application and have not been produced in a practical manner. Also, even though PCMs are potential next-generation memory devices, they have not made large market due to high power consumption, heat interference, and other shortcomings. In this work, ordered mesoporous SiO ₂ films were applied to an interlayer dielectric in PCM as a thermal insulating layer, resulting in one-quarter lower power consumption in PCM devices through the reduction of the power consumed in the RESET operation.

Original language	English
Pages (from-to)	321-325
Number of pages	5
Journal	Microporous and Mesoporous Materials
Volume	163
DOIs	https://doi.org/10.1016/j.micromeso.2012.07.039
Publication status	Published - 2012 Nov 15

Bibliographical note

Funding Information:
This study was supported by a Grant from the Fundamental R&D Program (Grant No. K0004114) for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea . Experiments at PLS were supported in part by MEST and POSTECH.

All Science Journal Classification (ASJC) codes

Chemistry(all)
Materials Science(all)
Condensed Matter Physics
Mechanics of Materials

Access to Document

10.1016/j.micromeso.2012.07.039

Cite this

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title = "Application of ordered mesoporous SiO 2 film for low power consumption in phase-change memory",

abstract = "This article presents an application of ordered mesoporous films to phase-change memory (PCM). Though ordered mesoporous SiO 2 films have attracted attention due to their regular arrangement of nanometer-sized pores, they have not yet become an integral component in any application and have not been produced in a practical manner. Also, even though PCMs are potential next-generation memory devices, they have not made large market due to high power consumption, heat interference, and other shortcomings. In this work, ordered mesoporous SiO 2 films were applied to an interlayer dielectric in PCM as a thermal insulating layer, resulting in one-quarter lower power consumption in PCM devices through the reduction of the power consumed in the RESET operation.",

author = "Ha, {Tae Jung} and Kim, {Hyung Keun} and Choi, {Doo Jin} and Sangwoo Shin and Cho, {Hyung Hee} and Jang, {Ho Won} and Yoon, {Seok Jin} and Park, {Hyung Ho}",

note = "Funding Information: This study was supported by a Grant from the Fundamental R&D Program (Grant No. K0004114) for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea . Experiments at PLS were supported in part by MEST and POSTECH. ",

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AU - Shin, Sangwoo

AU - Cho, Hyung Hee

AU - Jang, Ho Won

AU - Yoon, Seok Jin

AU - Park, Hyung Ho

N1 - Funding Information: This study was supported by a Grant from the Fundamental R&D Program (Grant No. K0004114) for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea . Experiments at PLS were supported in part by MEST and POSTECH.

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