Application of ordered mesoporous SiO 2 film for low power consumption in phase-change memory

Tae Jung Ha, Hyung Keun Kim, Doo Jin Choi, Sangwoo Shin, Hyung Hee Cho, Ho Won Jang, Seok Jin Yoon, Hyung Ho Park

Research output: Contribution to journalArticlepeer-review

8 Citations (Scopus)

Abstract

This article presents an application of ordered mesoporous films to phase-change memory (PCM). Though ordered mesoporous SiO 2 films have attracted attention due to their regular arrangement of nanometer-sized pores, they have not yet become an integral component in any application and have not been produced in a practical manner. Also, even though PCMs are potential next-generation memory devices, they have not made large market due to high power consumption, heat interference, and other shortcomings. In this work, ordered mesoporous SiO 2 films were applied to an interlayer dielectric in PCM as a thermal insulating layer, resulting in one-quarter lower power consumption in PCM devices through the reduction of the power consumed in the RESET operation.

Original languageEnglish
Pages (from-to)321-325
Number of pages5
JournalMicroporous and Mesoporous Materials
Volume163
DOIs
Publication statusPublished - 2012 Nov 15

Bibliographical note

Funding Information:
This study was supported by a Grant from the Fundamental R&D Program (Grant No. K0004114) for Core Technology of Materials funded by the Ministry of Knowledge Economy, Republic of Korea . Experiments at PLS were supported in part by MEST and POSTECH.

All Science Journal Classification (ASJC) codes

  • Chemistry(all)
  • Materials Science(all)
  • Condensed Matter Physics
  • Mechanics of Materials

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